Abstract:As semiconductor integration scales expand and chip sizes shrink, Through Silicon Via (TSV) technology advances towards smaller diameters and higher aspect ratios, posing significant challenges in thermo-mechanical reliability, particularly within interposer substrates where mismatched coefficients of thermal expansion exacerbate issues. This study conducts a thermo-mechanical analysis of TSV structures within multi-layered complex interposers, and analyzes the thermal stress behavior and reliability under variable temperature conditions (-55 °C to 85 °C), taking into account the typical electroplating defects within the copper pillars in TSVs. Initially, an overall model is established to determine the critical TSV locations. Sub-model analysis is then employed to investigate the stress and deformation of the most critical TSV, enabling the calculation of the temperature cycle life accordingly. Results indicate that the most critical TSV resides centrally within the model, exhibiting the highest equivalent stress. During the temperature cycling process, the maximum deformation experiences approximately periodic variations, while the maximum equivalent stress undergoes continuous accumulation and gradually diminishes. Its peak occurs at the contact interface corner between the TSV and Redistribution Layer (RDL). The estimated life of the critical point is 3.1708 × 105 cycles. Furthermore, it is observed that electroplating defect b alleviates thermal stress within TSVs during temperature cycling. This study provides insights into TSV thermal behavior and reliability, which are crucial for optimizing the design and manufacturing processes of advanced semiconductor packaging.

Self-consistent Design Issues for High Frequency Cu Interconnect Reliability Incorporating Skin Effect.

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

Computational Analysis of Mechanical and Electromigration Reliability Problems

Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Modeling and Characterization of On‐Chip Interconnects

The Effect of Line Width on Stress-Induced Voiding in Cu Dual Damascene Interconnects

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Thermal-aware electrical analysis of high-speed interconnect

Reliable Design of Electroplated Copper Through Silicon Vias

Reservoir Effect and the Role of Low Current Density Regions on Electromigration Lifetimes in Copper Interconnects

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Methods and designs for improving the signal integrity for 3D electrical interconnects in high performance IC packaging

Finite element analysis of failure in Cu interconnect megasonic cleaning

Research on the Electromigration Failure of W Interconnects under High-Temperature Environment