Enhanced Performance Of Zno/Sio2/Al2o3 Surface Acoustic Wave Devices With Embedded Electrodes
Rongxuan Su,Sulei Fu,Junyao Shen,Zhenglin Chen,Zengtian Lu,Mingliang Yang,Rui Wang,Fei Zeng,Weibiao Wang,Cheng Song,Feng Pan
DOI: https://doi.org/10.1021/acsami.0c12055
IF: 9.5
2020-01-01
ACS Applied Materials & Interfaces
Abstract:With the advent of the 5G era, surface acoustic wave (SAW) devices with a larger bandwidth and better temperature stability are strongly required, meanwhile the dimensions of devices are continuously scaling down. In this work, a new layout of ZnO/SiO2/Al2O3 SAW devices with embedded electrodes was developed, and with the help of the finite element method (FEM), the propagation characteristics were simulated. Through adopting embedded electrodes, a large electromechanical coupling coefficient (K-2) of 6.6% for the Rayleigh mode can be achieved (5 times larger than that of the conventional ZnO/Al2O3 structure), feasible for wideband SAW devices, and a low acoustic velocity (V-p) of 2960 m/s is exhibited simultaneously, which benefits the miniaturization of SAW devices. The dramatic enhancement of K-2 is mainly attributed to the more efficient excitation of SAW in piezoelectric films. Furthermore, a SiO2 overlay is added on the top of the structure to gain an excellent zero temperature coefficient of frequency (TCF). Experimentally, we successfully fabricated SAW one-port resonators based on the proposed structure and good characteristics of high K-2, low V-p, and small TCF as simulated were confirmed. Our results show that the proposed structure provides a viable route to design SAW devices with a large bandwidth, small size, and robust temperature compensation for practical use.