Photoelastic Measurement of Strain Induced by Die-Bonding of GaAs Chip on a Copper Heatsink Plate

Tao Chu,Masayoshi Yamada
DOI: https://doi.org/10.1143/JJAP.38.1153
1999-01-01
Abstract:Die-bonding-induced strain in a GaAs chip bonded on a copper heatsink plate has been measured with a reflection type of infrared polariscope. The spatial distributions of bonding-induced strain were seen to vary from sample to sample. The maximum value of the bonding-induced strain was found to be of the order of 10(-4), which corresponded to about 1/10 of that estimated from the thermal expansion difference for the unit length between GaAs and copper when it was cooled down from the die-bonding temperature to the room temperature.
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