Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Pulse Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale Thin GaN Layers on Si Substrates

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Wurtzite GaN Epitaxial Growth on Si(111) Using Silicon Nitride As an Initial Layer

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Epitaxial growth of GaN film on Si substrate

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

MOCVD Growth of Device-Quality GaN on Sapphire Using a Three-Step Approach

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures