Radiation Effects of Protons and Electrons on Backfield Silicon Solar Cells

Yiyong Wu,Zhengyu Hu,Jingdong Xiao,HongBin Geng,Shiyu He,Dezhuang Yang,XiBin Cao
DOI: https://doi.org/10.2514/1.15404
2006-01-01
Journal of Spacecraft and Rockets
Abstract:The electrical properties of back field silicon solar cells were investigated after the samples were irradiated by protons and electrons with 30-180 keV and a given flux of 1.2 x 10(12) cm(-2) s(-1) for various fluences at 77 K. The results show that the short-circuit current decreases gradually with increasing proton fluence, whereas the open-circuit voltage degrades severely under lower fluences. Radiation of electrons with energy lower than 180 keV and various fluences causes negligible change in the electrical properties of the solar cell, but a significant change appears and then a recovery effect of the electrical properties in in situ measurements during irradiation and afterward, respectively. The effect of the combined radiation of protons and electrons does not show simple additivity; the radiation effects of protons dominate the process. The damage caused by proton radiation is larger than that from combined radiation under lower electron fluences, whereas the combined radiation results in more severe damage under higher fluences. The changes in the electrical features of solar cells after radiation are explained.
What problem does this paper attempt to address?