Weak Antilocalization Effect In High-Mobility Two-Dimensional Electron Gas In An Inversion Layer On P-Type Hgcdte

Rui Yang,KuangHong Gao,Laiming Wei,Xinzhi Liu,Gujin Hu,Guolin Yu,Tie Lin,Shaoling Guo,Wei Yanfeng,Jianrong Yang,Li He,Ning Dai,Junhao Chu,David Guy Austing
DOI: https://doi.org/10.1063/1.3615303
IF: 4
2011-01-01
Applied Physics Letters
Abstract:Magnetoconductance of a gated two-dimensional electron gas (2DEG) in an inversion layer on a p-type HgCdTe film is investigated. At strong magnetic fields, characteristic features such as the quantum Hall effect of a 2DEG with single subband occupation are observed. At weak magnetic fields, the weak antilocalization effect in the ballistic regime is observed. Phase coherence time and zero-field spin-splitting are extracted following Golub's model [L. E. Golub, Phys. Rev. B 71, 235310 (2005)]. The temperature dependence of the dephasing rate is consistent with the Nyquist mechanism. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615303]
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