Study on Loss Calculation and Model for IGBT

XIONG Yan,SHEN Yan-qun,JIANG Jian,HE Xiang-ning

2006-01-01

Abstract:Power devices loss is important for the system design, the device parameters and the choice of heat sinks. The loss models are divided into two types: one is based on physics, the other is based on mathematics. Several methods in recent years and their applications are discussed.

What problem does this paper attempt to address?

An Improved Analytical IGBT Model for Loss Calculation Including Junction Temperature and Stray Inductance

Yunyu Tang,Hao Ma

DOI: https://doi.org/10.1109/isie.2015.7281473

2015-01-01

Abstract:An improved analytical model suitable for IGBT modules is proposed in this paper to calculate the power losses with high accuracy and short calculation time. In this model, the parameters varying with junction temperature of the modules, such as di/dt in the turn-on period and dv/dt in the turn-off period, are discussed and derived according to several equivalent models. In addition, the parasitic inductance in the circuit including the emitter and collector inductance in the power circuits and the gate inductance in the driving loop are considered in this model. Based on this proposed model, the simulation switching waveforms of collector currents and collector-emitter voltages are provided to verify the model. Meanwhile, the calculated power losses are confirmed to be precise by comparing with measurement results.
An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules

Tang Yunyu,Lin Liaoyuan,Ma Hao

DOI: https://doi.org/10.19595/j.cnki.1000-6753.tces.2017.12.009

2017-01-01

Abstract:In high power systems, the switching devices are usually utilized in parallel in order to scale up the power rate of circuits. A transient electro-thermal model of paralleled modules needs to be established to keep insulated gate bipolar transistor (IGBT) modules operating in the safe area. Firstly, the influence on losses by junction temperature is analyzed in detail. The variations of voltage and current are derived by building equivalent circuits in different switching periods. Meanwhile, the quantitative relationship between temperature-sensitive parameters and junction temperature is determined by building test platform. Furthermore, considering the coupling thermal path between paralleled modules, an improved thermal model for paralleled modules is proposed and analyzed. Finally, an electro-thermal model is built based on loss analysis and thermal model. The experimental platform was built to analyze the influence of distance between the modules on the transient junction temperature in paralleled modules. Compared with traditional models, the calculation results agree well with the experimental results, which validates the proposed model.
Simplified Thermal Modeling for IGBT Modules with Periodic Power Loss Profiles in Modular Multilevel Converters

Yi Zhang,Huai Wang,Zhongxu Wang,Yongheng Yang,Frede Blaabjerg

DOI: https://doi.org/10.1109/tie.2018.2823664

IF: 7.7

2019-01-01

IEEE Transactions on Industrial Electronics

Abstract:One of the future challenges in modular multilevel converters (MMCs) is how to size key components with compromised costs and design margins, while fulfilling specific reliability targets. It demands better thermal modeling compared to the state-of-the-arts in terms of both accuracy and simplicity. Different from two-level power converters, MMCs have inherent dc-bias in arm currents and the power device conduction time is affected by operational parameters. A time-wise thermal modeling for the power devices in MMCs is, therefore, an iteration process and time-consuming. This paper, thus, proposes a simple analytical thermal modeling method, which adopts equivalent periodic power loss profiles. More importantly, time-domain simulations are not required in the proposed method. Benchmarking of the proposed methods with the prior-art solutions is performed in terms of parameter sensitivity and model accuracy with a case study on a 30-MW MMC system. Experiments are carried out on a specifically designed scaled-down system to verify the electrothermal aspects.
A Simplification Method for Power Device Thermal Modeling with Quantitative Error Analysis

Yi Zhang,Huai Wang,Zhongxu Wang,Yongheng Yang,Frede Blaabjerg

DOI: https://doi.org/10.1109/jestpe.2019.2916575

IF: 5.462

2019-01-01

IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract:To evaluate the reliability of power electronic systems, it is necessary to estimate the junction temperatures of power devices under periodic power loss profiles due to the fundamental-frequency current. However, a large number of periodic power loss profiles under long-term reliability evaluation (e.g., 1 year) are challenging to compute quickly. On the other hand, in order to improve computational efficiency, unvalidated simplified thermal analysis methods may impair the confidence of the reliability outcome. Therefore, this paper proposes an analytical model for power semiconductors with a compromise of the thermal estimation accuracy and computational efficiency. With the proposed model, it is indicated that minimum computation efforts can be obtained for thermal estimation under a maximum allowable error. The proposed method, thus, enables computation-efficient thermal stress analysis for power semiconductor devices with a preset modeling error. The effectiveness of the proposed method has been verified by simulations and experiments on a power electronic system with 1200-V/50-A insulated gate bipolar transistor (IGBT) modules.
Mission Profile Based Sizing of Igbt Chip Area for Pv Inverter Applications

Yanfeng Shen,Huai Wang,Yongheng Yang,Paula Diaz Reigosa,Frede Blaabjerg

DOI: https://doi.org/10.1109/pedg.2016.7527028

2016-01-01

Abstract:Maximizing the total energy generation is of importance for Photovoltaic (PV) plants. This paper proposes a method to optimize the IGBT chip area for PV inverters to minimize the annual energy loss of the active switches based on long-term operation conditions (i.e., mission profile). The design process is firstly introduced. Then the power loss, thermal characteristic and lifetime for IGBT modules with different chip areas are modeled. After that, the dependence of the annual energy loss and maximum junction temperature on the IGBT chip area and switching frequency is derived under a specific yearly mission profile. Simulation results are given to verify the thermal characteristics. Furthermore, a Monte Carlo based lifetime evaluation is presented to check the IGBT reliability. The proposed design method enables a reliability-oriented energy optimized sizing of active switches for PV inverter applications, which otherwise cannot be achieved by taking into account the power efficiency at rated condition or the weighted power efficiency at several loading levels only.
Improved Switching Loss Calculation in Neutral Point Clamped Inverter Via Waveforms Linearization

Hongyang Liu,Jiong Ma,Hao Ma,Zhihong Bai

DOI: https://doi.org/10.1109/isie.2013.6563632

2013-01-01

Abstract:An improved switching loss calculation method for IGBT switching on, switching off and the diode reverse recovery energy losses in neutral point clamped inverter is proposed in this paper. A model of linear instantaneous switching on and off waveforms is presented to approximate actual switching process. The IGBT switching on and off duration, the changing rates of current di/dt and collector-emitter voltage dv/dt all can be calculated at different load currents with the given IGBT parameters. Besides, the proposed method is apparently different from the linear waveform method used before which assuming switching time to be a constant value. In addition, compared with the traditional mathematical equation that uses measured data to fit a formula, the equation proposed here is based on physical model and it can indicate the relationship between gate drive resistor, the IGBT capacitance, trans-conductance and switching process. An inverter employing a switching pattern as sinusoidal PWM (SPWM) was designed and experiment was carried out to test the switching waveforms under different output currents. Switching loss under different currents was also measured and compared with calculated value using mathematical equation proposed in this paper.
Power Loss and Junction Temperature Analysis of Power Semiconductor Devices

DW Xu,HW Lu,LP Huang,SS Azuma,MH Kimata,RH Uchida

DOI: https://doi.org/10.1109/tia.2002.802995

IF: 4.079

2002-01-01

IEEE Transactions on Industry Applications

Abstract:A new developed electro-thermal calculation method is implemented to estimate the power loss and working temperature of IGBT devices. Based on the measurement of IGBT characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then the thermal network is used to calculate the working temperature. The comparison between experiment and calculation results shows that this method is effective as a designing step with only the time domain voltage and current data obtained from simulation results.
Research on the Power Loss and Junction Temperature of Power Semiconductor Devices for Inverter

Azuma, S.,Kimata, M.,Seto, Makoto,Xinjian Jiang

DOI: https://doi.org/10.1109/ivec.1999.830658

1999-01-01

Abstract:A new calculation method to estimate the power loss and the working temperature of IGBT and diode devices in an inverter is presented. This method is based on the measurement data of the IGBT's transient and steady state characteristics under different conditions and the thermal equivalent network model of the actual system. Finally, an experiment of a drive system including an inverter and a permanent magnet synchronous motor was done. The result shows that the calculation program is very effective for the thermal design of inverters
Electrical-magnetic Model and Power Loss Evaluation for IGCTs

FAN Zichao,SONG Qiang,LIU Wenhua,QIAN Jin

DOI: https://doi.org/10.3321/j.issn:1000-1026.2006.22.004

2006-01-01

Abstract:Accurate switching loss evaluation is playing an increasingly important role in the reliability design of large power converters and devices.For instance,the unbalanced power loss of two switches in one arm has occurred in the operational test of 50 MVA STATCOM.In view of such a problem,this paper analyzes the electrical relations between the commutating switches,develops a new electrical-magnetic model and power loss calculating method for IGCTs.With the new method,the unbalanced loss is attributed to the redundant PWM state and an improved PWM is presented.Laboratory experiment and simulation results have proved that the method can be used in the design of thermal systems and for improving the balance of power loss.The waveform given by the electrical-magnetic model is close to the actual waveform.
Quasi-Online Modeling Method of the Power Inverter Losses Based on IGBT Offline Test Platform

He Xiangning,Wu Yansong,Luo Haoze,Li Peng,Li Wuhua,Deng Yan

DOI: https://doi.org/10.19595/j.cnki.1000-6753.tces.2014.06.001

2014-01-01

Abstract:The inverter loss is an important research field in Power Electronics. Most loss calculation methods always take advantages of the manufacturer’s datasheets, whose testing conditions are different from the actual working ones. In this paper, the quasi-online modeling method of the inverter losses based on IGBT offline test platform is proposed. The modeling method considers commutation modes, modulation methods and different loads, and simulates actual working conditions such as commutation modes, the driving situation, the buffer circuit, stray parameters and so on. Then, by invoking the switching dynamic performance multiple-dimension database, the proposed method obtains the IGBT switching losses and figures out the inverter total loss under actual working conditions. The quasi-online loss modeling method’s validity is verified by the actual measurement. This modeling method can play an important role in the heatsink selection and structure optimization design of high efficiency power inverters.
Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

Ke Ma,Amir Sajjad Bahman,Szymon Beczkowski,Frede Blaabjerg

DOI: https://doi.org/10.1109/tpel.2014.2352341

2014-01-01

Abstract:Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal models, only the electrical loadings are focused and treated as design variables, while the device rating is normally predefined by experience with limited design flexibility. Consequently, a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, thermal impedance, and silicon area of insulated gate bipolar transistor (IGBT) is mathematically established. By this new modeling approach, all factors that have impacts to the loss and thermal profiles of the power devices can accurately be mapped, enablingmore design freedom to optimize the efficiency and thermal loading of the power converter. The proposed model can be further improved by experimental tests, and it is well agreed by both circuit and finite element method (FEM) simulation results.
Accurate conduction and switching loss models of IGBTs for resonant converter design

d i m de silva,n k shrestha,p r palmer,f udrea,g a j amaratunga,d chamund,l coulbeck,p waind

DOI: https://doi.org/10.1109/PESC.2004.1355303

2004-01-01

Abstract:This paper presents an accurate switching and conduction loss model for zero current switching (ZCS) and zero voltage switching (ZVS) IGBTs. Mathematical modelling is carried out giving careful consideration to all the significant features and dependant parameters, namely collector current, resonant frequency and case temperature. Model parameter extraction is carried out using the experimental results from two test circuits. The model shows excellent agreement with the experimental results and SPICE simulation results obtained using a physical IGBT model.
Switching loss analysis and modeling of power semiconductor devices base on an automatic measurement system

Yanqun Q. Shen,Yan Xiong,Jian Jiang,Yan Deng,Xiangning He,Zhaohui Zeng

DOI: https://doi.org/10.1109/ISIE.2006.295746

2006-01-01

Abstract:Design of the automatic measurement system for switching energy losses of power semiconductor devices is described in the paper. Automatic regulation of DC link voltage, collector current, gate drive voltage, gate resistance, and device junction temperature can be realized. Switching energy losses of the devices under different conditions can be obtained conveniently with this system. Based on plenty of measured data from the automatic measurement system and the corresponding analysis, Different methods including two traditional curve fitting method based on different function types and neural network (NN) curve fitting method have been tried to modeling the switching energy losses. AU of these methods can take into account the above 5 parameters and are implemented in a 1200V/20A NPT IGBT. The modeling result shows that the NN has a better accuracy when the measured data is sufficient enough to describe the whole operation area of the device. © 2006 IEEE.
Research on Impacts of Different Parameters on Transient Power Loss of IGBT

Gaoyu Zou,Zhengming Zhao

DOI: https://doi.org/10.1109/icems.2013.6713115

2013-01-01

Abstract:Power loss of semiconductor devices is the critical element, reflecting efficiency of the converter system indirectly. The loss of devices is consisted of steady state loss and transient loss. This paper introduces a functional model of transient power loss for IGBT to study the impact of different parameters on transient loss. Both turn-on and turn-off processes are analyzed in detail and mathematic expressions of power loss considering stray inductance are given. Then the change laws of transient power loss of IGBT with several parameters including DC-link voltage, junction temperature of IGBT and stray inductance of IGBT loop are studied by a number of experimental results, which also verify the theoretic analysis.
Power Loss Calculation Method for IGBT in Converter Valve Based on Inverse Heat Transfer Problem

Li Liu,Meijun Bao,Liusong Zhang,Xueliang Fan,Daosheng Tang

DOI: https://doi.org/10.1109/ciycee53554.2021.9676787

2021-01-01

Abstract:Insulated Gate Bipolar Transistor (IGBT) is the key component of converter valve used in flexible High Voltage Direct Current (HVDC) transmission system. The power loss calculation of the IGBT is essential to design the cooling system and to estimate the system reliability in practical engineering. In this paper, an effective calculation method for the power loss of IGBT is proposed by solving an inverse heat transfer problem, where the finite element method is used to solve the heat transfer processes in the IGBT module and water-cooled plate. The calculation results show that a small power loss error (<2%) can be guaranteed with a reasonable temperature measurement error (<$\pm 0.1^{\circ}\mathrm{C})$, demonstrating a high prediction precision of this method. Considering that the practical implementation based on this calculation method is quite simple, this method is promising to be very useful for engineering applications.
Power Loss Calculation for the Power Converter in Switched Reluctance Motor Drive.

Yang Xu,Jason Gu,Hao Chen,Zheng Chen,Yi Pu

DOI: https://doi.org/10.1109/icinfa.2014.6932619

2014-01-01

Abstract:Switched reluctance motor system is a novel electromagnetic system with good application prospects. The loss from the power converter is one of the main issues for the design and operation of the system. In this paper, the methods to calculate the power loss of the power converter in switched reluctance motor drive are introduced. The simulation model for the whole system is built, which can calculate the power loss of every power MOSFET. Then the influences of the parameters, such as PWM duty cycle, frequency, motor speed, and turn off angle, on the device power loss are analyzed. At last, the device junction temperature is presented.
A Method of Power Loss Calculation for RB-IGBT Matrix Converter

Kai Sun,Lipei Huang

2008-01-01

Abstract:The calculation and distribution of power losses for RB-IGBT based matrix converter are discussed in this paper. The on-state performance and switching transients of RB-IGBTs are analyzed in detail. According to this analysis, the calculation models of switching losses and conduction loss are established and a power loss calculation method based on the mathematical fit of experimental test data is proposed. Calculation results are presented to validate the proposed method. In addition, this method can also be used for other power converters using RB-IGBT.
Application of Artificial Neural Network for Switching Loss Modeling in Power Igbts

Yan Deng,Xiang-ning He,Jing Zhao,Yan Xiong,Yan-qun Shen,Jian Jiang

DOI: https://doi.org/10.1631/jzus.c0910442

2010-01-01

Abstract:The modeling of switching loss in semiconductor power devices is important in practice for the prediction and evaluation of thermal safety and system reliability. Both simulation-based behavioral models and data processing-based empirical models are difficult and have limited applications. Although the artificial neural network (ANN) algorithm has often been used for modeling, it has never been used for modeling insulated gate bipolar transistor (IGBT) transient loss. In this paper, we attempt to use the ANN method for this purpose, using a customized switching loss test bench. We compare its performance with two conventional curve-fitting models and verify the results by experiment. Our model is generally superior in calculation speed, accuracy, and data requirement, and is also able to be extended to loss modeling for all kinds of semiconductor power devices.
A Transient 3-D Thermal Modeling Method for IGBT Modules Considering Uneven Power Losses and Cooling Conditions

Jianpeng Wang,Wenjie Chen,Laili Wang,Binyu Wang,Cheng Zhao,Dingkun Ma,Fengtao Yang,Yan Li

DOI: https://doi.org/10.1109/jestpe.2020.3021679

IF: 5.462

2021-08-01

IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract:Junction temperature is a key parameter for the safe operation of power semiconductor devices in power electronic systems. However, it is difficult to forecast the accurate thermal stress of the device in field use. Consequently, engineers tend to use higher rated devices to maintain excessive margin, resulting in a higher cost. In this article, a transient 3-D thermal modeling method for insulated gate bipolar transistor (IGBT) modules is proposed to obtain accurate temperature distribution considering uneven power losses and cooling conditions. The analytical model of uneven switching energy losses among the parallel IGBT chips in modules is built according to the analysis of device simulation results. The effect of uneven cooling conditions on temperature distribution in IGBT modules is considered by thermal-fluid cosimulation. Furthermore, a hybrid simulation strategy is proposed to obtain the transient thermal behavior in three dimensions. Through appropriate interface design, the power loss model is connected with the finite element model to achieve field-circuit cosimulation with multiple time steps, which takes full consideration of the multiphysical coupling effects among power loss, temperature, and flow fields. Finally, the thermal stresses of IGBT modules under different operating conditions are forecast by the proposed method.

engineering, electrical & electronic
A Numerical Method for Solving the Physics-Based Model of IGBT with All Free-Carrier Injection Conditions in the Base Region

Jiajia Chen,Yuhan Ma,Shiyou Yang

DOI: https://doi.org/10.1108/compel-12-2016-0558

2017-01-01

Abstract:PurposeThe purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition.Design/methodology/approachA numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed.FindingsThe results of the proposed model are very close to the tested ones.Originality/valueA mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.

Study on Loss Calculation and Model for IGBT

An Improved Analytical IGBT Model for Loss Calculation Including Junction Temperature and Stray Inductance

An Improved Transient Electro-Thermal Model for Paralleled IGBT Modules

Simplified Thermal Modeling for IGBT Modules with Periodic Power Loss Profiles in Modular Multilevel Converters

A Simplification Method for Power Device Thermal Modeling with Quantitative Error Analysis

Mission Profile Based Sizing of Igbt Chip Area for Pv Inverter Applications

Improved Switching Loss Calculation in Neutral Point Clamped Inverter Via Waveforms Linearization

Power Loss and Junction Temperature Analysis of Power Semiconductor Devices

Research on the Power Loss and Junction Temperature of Power Semiconductor Devices for Inverter

Electrical-magnetic Model and Power Loss Evaluation for IGCTs

Quasi-Online Modeling Method of the Power Inverter Losses Based on IGBT Offline Test Platform

Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

Accurate conduction and switching loss models of IGBTs for resonant converter design

Switching loss analysis and modeling of power semiconductor devices base on an automatic measurement system

Research on Impacts of Different Parameters on Transient Power Loss of IGBT

Power Loss Calculation Method for IGBT in Converter Valve Based on Inverse Heat Transfer Problem

Power Loss Calculation for the Power Converter in Switched Reluctance Motor Drive.

A Method of Power Loss Calculation for RB-IGBT Matrix Converter

Application of Artificial Neural Network for Switching Loss Modeling in Power Igbts

A Transient 3-D Thermal Modeling Method for IGBT Modules Considering Uneven Power Losses and Cooling Conditions

A Numerical Method for Solving the Physics-Based Model of IGBT with All Free-Carrier Injection Conditions in the Base Region