Abstract:We report the growth of graphene at a low temperature using the cold wall chemical vapor deposition technique (CWCVD). Few layered (~6-8 layers) graphene were grown on nickel-coated silicon with acetylene as the precursor gas. The advantage of the combination of the acetylene (as a carbon feedstock) and the nickel catalyst was the lowering of the graphene growth temperature. Nickel coated silicon samples were pre-treated (heat treatment in inert atmosphere) before the growth and the effect of the pre-treatment on the catalyst as well as on the grown film was studied. The final samples were characterized with scanning electron microscopy and Raman spectroscopy. In CWCVD route, the heating of only the substrate holder enabled high heating and cooling rates, which, along with the control over partial pressure of the precursor gas had profound effect on the formation of graphene. In the best sample we have achieved almost equal intensity of the G and 2D peaks in Raman spectrum, which implied about ~6-8 layers of Graphene. The defect peak (the D band) was extremely small in the sample and it was attributed to the ripples and the underlying roughness of the nickel film. We analyzed that a proper choice of the thickness of catalyst layer and a higher cooling rate after graphene growth it would be possible to obtain monolayered graphene. Similar samples grown in a normal atmospheric CVD (with some engineered design to promote fast cooling) were also compared with the cold wall CVD grown samples and plasma assisted CWCVD, and cold-wall CVD demonstrated a better control over the quality of graphene film through the fast cooling and a controlled partial pressure of the precursor gas.

Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films

Layer-controlled and wafer-scale synthesis of uniform and high-quality graphene films on a polycrystalline nickel catalyst

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling

Continuous Epitaxy of Single-Crystal Graphite Films by Isothermal Carbon Diffusion Through Nickel.

Synthesis of Single-Layer Graphene on Nickel Using A Droplet Cvd Process

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

Graphene synthesis by chemical vapor deposition and transfer by a roll-to-roll process

Production of extended single-layer graphene.

Synthesis and Solid-State NMR Structural Characterization of 13C-Labeled Graphite Oxide.

Graphene films with large domain size by a two-step chemical vapor deposition process

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Synthesis of Nitrogen-Doped Graphene by Chemical Vapour Deposition Using Melamine As the Sole Solid Source of Carbon and Nitrogen

Metal-Free Catalytic Preparation of Graphene Films on a Silicon Surface Using CO as a Carbon Source in Chemical Vapor Deposition

Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach

Synthesis and characterization of atomically-thin graphite films on a silicon carbide substrate

Fast, wafer-scale growth of a nanometer-thick graphite film on Ni foil and its structural analysis

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Low-temperature quantum transport in CVD-grown single crystal graphene