Abstract:Single-crystalline wurtzite GaN nanotubes have been synthesized recently with proposed applications in nanoscale electronics, optoelectronics, and the biochemical sensing field. In this work, molecular dynamics methods with a Stillinger-Weber potential have been used to investigate the melting behavior, thermal conductivity, and mechanical properties of wurtzite-type single-crystalline GaN nanotubes. (1) The simulations show that the melting temperature of the GaN nanotubes increases with the thickness of the nanotubes to a saturation value, which is close to the melting temperature of a bulk GaN. The results reveal that the nanotubes begin to melt at the surface, and then the melting rapidly extends to the interior of the nanotubes as the temperature increases. (2) The thermal conductivity of nanotubes is smaller than that of the bulk GaN single crystal. The thermal conductivity is also found to decrease with temperature and increase with increasing wall thickness of the nanotubes. The change of phonon spectrum and surface inelastic scattering may account for the reduction of thermal conductivity in the nanotubes, while thermal softening and high-frequency phonon interactions at high temperatures may provide an explanation for its decrease with increasing temperature. (3) The simulation results show that at low temperatures, the nanotubes show brittle properties, whereas at high temperatures, they behave as ductile materials. The brittle to ductile transition temperature generally increases with increasing thickness of the nanotubes and strain rate. (4) The simulation temperature, tube length, and strain rate all can affect the buckling behavior of GaN nanotubes. The critical stress decreases with the increase of simulation temperature and tube length. The tube length dependence of buckling is compared with those from the analysis of equivalent continuum structures using Euler buckling theory.

Crystallography and Elasticity of Individual GaN Nanotubes

Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale

Synthesis and In-Situ TEM Transport Measurements of Individual GaN Nanowires and Nanotubes

Physical Properties of GaN Nanotubes as Revealed by Computer Simulation

Atomistic Level Studies on the Tensile Behavior of GaN Nanotubes under Uniaxial Tension

Effective Geometric Size and Bond-Loss Effect in Nanoelasticity of GaN Nanowires

Anelastic behavior in GaAs semiconductor nanowires.

Mechanical Behavior Of Gallium Nitride Nanotubes Under Combined Tension-Torsion: An Atomistic Simulation

Orientation and Temperature Dependence of the Tensile Behavior of GaN Nanowires: an Atomistic Study

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Wurtzite-Type Faceted Single-Crystalline Gan Nanotubes

Atomistic Simulations of the Size, Orientation, and Temperature Dependence of Tensile Behavior in Gan Nanowires

Super deformability and Young's modulus of GaAs nanowires.

Elastic properties of graphyne-based nanotubes

Elastic modulus of β-Ga2O3 nanowires measured by resonance and three-point bending techniques

Nanomechanical behavior of single taper-free GaAs nanowires unravelled by in-situ TEM mechanical testing and molecular dynamics simulation

Mechanical Responses of A-Axis GaN Nanowires under Axial Loads.

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Atomistic Simulation of the Torsional Buckling of Single-Crystalline GaN Nanotubes

Tensile Behavior Of Single Crystalline Gan Nanotube Bundles: An Atomistic-Level Study

Exceptionally high Young's modulus observed for individual carbon nanotubes