Synthesis of Silicon Carbide Nanowires by Cvd Without Using A Metallic Catalyst

Qian-Gang Fu,He-Jun Li,Xiao-Hong Shi,Ke-Zhi Li,Jian Wei,Zhi-Biao Hu
DOI: https://doi.org/10.1016/j.matchemphys.2005.12.014
IF: 4.778
2006-01-01
Materials Chemistry and Physics
Abstract:Using CH3SiCl3 (MTS) and H2 as the precursors, large quantities of SiC nanowires with homogeneous diameter have been fabricated by a simple chemical vapor deposition process without using a metallic catalyst. The as-grown SiC nanowires were identified by TEM and XRD as single crystal β-SiC structure, with diameters of about 70nm. As the increasing of deposition temperature, or as the decreasing of H2/MTS mol ratio, the SiC crystal dimensions increase and the morphologies of the as-grown SiC crystal change from nanowires to grains. β-SiC coaxial nanocables with a amorphous wrapping layer have also been obtained by the oxidation of SiC nanowires.
What problem does this paper attempt to address?