Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Bilayer Memory Device Based on a Conjugated Copolymer and a Carbon Nanotube/Polyaniline Composite

Ferroelectric-carbon Nanotube Memory Devices.

Bistable Electrical Switching And Write-Once Read-Many-Times Memory Effect In A Donor-Acceptor Containing Polyfluorene Derivative And Its Carbon Nanotube Composites

Electrochemical Fabrication of A Memory Device Based on Conducting Polymer Nanocomposites

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

An Electrogenerated Chemical-Oxidation-Driving Nonvolatile Plastic Memory Device with the Conjugated Polymer/Carbon Nanotube Blend

Fabrication of polymer composite films with carbon composite nanofibers doped MWNTs-OH for multilevel memory device application

An electrospun polymer composite with fullerene-multiwalled carbon nanotube exohedral complexes can act as memory device

Flexible Write-Once–Read-Many-Times Memory Device Based on a Nickel Oxide Thin Film

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Ternary Flash Memory with a Carbazole-Based Conjugated Copolymer: WS2 Composites As Active Layers

Enhancing nonvolatile write-once-read-many-times memory effects with SiO 2 nanoparticles sandwiched by poly(N-vinylcarbazole) layers

Polydopamine Film Self‐Assembled at Air/Water Interface for Organic Electronic Memory Devices

In-Situ Surface Modification of ITO Substrate Via Bio-Inspired Mussel Chemistry for Organic Memory Devices

Conjugated polymer covalently modified multi-walled carbon nanotubes for flexible nonvolatile RRAM devices

Bi-layer Resistive Switching Memory Using Aligned SWCNTs As Electrodes

Nonvolatile Memory Devices With Cu2s And Cu-Pc Bilayered Films \

From Unipolar, WORM‐Type to Ambipolar, Bistable Organic Electret Memory Device by Controlling Minority Lateral Transport

Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers.

Thickness Effect of Nickel Oxide Thin Films on Associated Solution-Processed Write-Once-read-many-times Memory Devices