Preparation and characterization of Al-doped quasi-aligned ZnO submicro-rods

Haiping Tang,Liping Zhu,Haiping He,Zhizhen Ye,Yang Zhang,Mingjia Zhi,Zhixiang Yang,Binghui Zhao,Tianxin Li

DOI: https://doi.org/10.1088/0022-3727/39/13/010

2006-01-01

Abstract:Al-doped quasi-aligned ZnO submicro-rods were prepared on heavily doped n-type Si(111) substrates by the thermal evaporation method. Electrical transport measurements indicate the Al-doped ZnO submicro- rods have better conductivity than the undoped submicro-rods. The photoluminescence excitation spectrum of the annealed sample indicates an energy level similar to 100 meV below the conduction band minimum, which may be due to the localized state of the Al impurity. The annealed sample exhibits a strong green emission centred at 2.45 eV that can be seen by the naked eye and an infrared emission centred at 1.10 eV. The intensity ratios of the deep-level green emission to the ultraviolet emission are 0.86 and 30 for the as-grown and annealed samples, respectively. Moreover, two emissions at 2.2 and 1.96 eV were discriminated from the PL spectrum of the as-grown Al-doped ZnO submicro- rods, which were not observed in the pure ZnO submicro- rods and the annealed Al-doped sample.