Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

The morphology and optical characterizations of AlGaN/GaN based on Al 2O3 prepared by MOCVD

Gan Films under Different Growth Mechanisms Studied by Synchrotron X-Ray Absorption Spectroscopy

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Comparative Study of Different Properties of GaN Films Grown on (0001) Sapphire Using High and Low Temperature AlN Interlayers

Microstructures and optical characteristics of AlGaN/GaN based on Al2O3 prepared by MOCVD

Characterization of Gan/Sapphire Interface and the Buffer Layer by TEM/AFM

Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers

Structural characterization of Eu-doped GaN by transmission electron microscopy

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Study of InGaN Films Grown by MOCVD

Correlation of In-Situ Reflectance Spectra and Resistivity of GaN/Al 2 O 3 Interfacial Layer in Metalorganic Chemical Vapor Deposition

Correlation Between the Infrared Reflectance and Microstructure of Thin Gallium Nitride Films Grown on Silicon Substrates

Optical property studies of GaN films grown by MOCVD

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers