Multiphonon Resonant Raman-Scattering Gase

J. Camassel,T.C. Chiang,Y.R. Shen,J.-P. Voitchovsky,N.M. Amer

DOI: https://doi.org/10.1016/0038-1098(76)90047-8

IF: 1.934

1976-01-01

Solid State Communications

Abstract:Multiphonon resonant Raman scattering up to 4 phonons in GaSe has been measured. The results are interpreted by a simple cascade theory. It is shown that the dispersion of RRS here is dominated by resonances with the exciton states.

What problem does this paper attempt to address?

Resonant Raman Study of Trigonal Se

PY YU,N AMER,YR SHEN,Y PETROFF

DOI: https://doi.org/10.1103/physrevb.14.644

1976-01-01

Abstract:Resonant Raman scattering has been studied in trigonal Se at low temperatures in the region of its indirect and direct excitonic absorption edges. Whereas no enhancement in Raman cross sections was observed at the indirect absorption edge, strong dispersion was found in the region of the direct excitons. In the vicinity of the direct absorption edge Raman cross sections of one-phonon modes decreased monotonically with increase in photon energy in all three scattering configurations studied. This monotonic decrease in Raman cross sections was explained qualitatively by resonant cancellation between a constant background and a dispersive term due to the 2.20-eV peak in the reflectivity spectrum of Se. Resonant enhancements were observed at the direct excitons only in the scattering configuration where the incident and scattered photons are both polarized perpendicular to the $c$ axis. The enhancements are explained quantitatively by a simple model involving two direct excitons of Se as resonant intermediate states. We have also determined directly the longitudinal and transverse mode splitting of the low-energy $E$ mode in trigonal Se as 7 \ifmmode\pm\else\textpm\fi{} 2 ${\mathrm{cm}}^{\ensuremath{-}1}$.
Exciton Enhanced Raman Scattering of LO Phonons in Trigonal Se

N. Amer,Y. Petroff,Y. R. Shen,P. Y. Yu

DOI: https://doi.org/10.1007/978-3-322-94774-1_80

1974-01-01

Abstract:Resonance enhancements in the Raman cross-section of longitudinal optical (LO) phonons in trigonal Se have been measured around its excitonic absorption edge at low temperatures. Our results are explained in terms of resonant scattering of LO phonons via the Fröhlich interaction.
Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation*

Yu-Lu Zheng,Liang Li,Fang-Fei Li,Qiang Zhou,Tian Cui

DOI: https://doi.org/10.1088/0256-307x/37/8/088201

2020-01-01

Abstract:Few-layered gallium selenide（GaSe） is obtained by using the mechanical exfoliation method, and its properties are characterized by photoluminescence and Raman spectroscopy. The pressure-dependent phonon scatterings of bulk, few-layered, oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium. All the GaSe samples processed a phase transition around28 GPa. A new vibration mode at 250 cm -1 is found in oxidized few-layered GaSe by Raman spectra, which is indexed as the Raman vibration mode of α-Se.
Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Ailing Yang,Huizhen Wu,Zhifeng Li,Dongjiang Qiu,Yong Chang,Jianfeng Li,Patrick J. McCann,Xiaoming Fang

DOI: https://doi.org/10.1088/0256-307X/17/8/022

2000-01-01

Chinese Physics Letters

Abstract:PbSe films were grown on (111)-oriented BaF2 substrates by using molecular beam epitaxy. High resolution x-ray diffraction characterization showed good crystalline quality of PbSe films. Both longitudinal optical phonon at 135 cm(-1) and transverse optical phonon at 47.6 cm(-1) were observed by Raman scattering measurements, The Raman tensor calculation demonstrates that both transverse-optical and longitudinal-optical (LO) phonons in PbSe crystal are Raman active on (111)-oriented surface. Furthermore, 2LO phonon at about 270 cm(-1) and polaron at about 800 cm(-1) in PbSe, were also observed. The observed Raman frequencies are in good agreement with theoretical calculations using point ion model.
Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers

Liam P. McDonnell,Jacob Viner,Pasqual Rivera,Xiaodong Xu,David C. Smith

DOI: https://doi.org/10.1088/2053-1583/ab98f0

2020-06-11

Abstract:We present a high-resolution resonance Raman study of hBN encapsulated MoSe$_2$ and WSe$_2$ monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe$_2$ A2s and MoSe$_2$ A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering between different Rydberg states via optical phonons. By calibrating the Raman scattering efficiency and separately constraining the electric dipole matrix elements, we reveal that the scattering rates for k=0 optical phonons are comparable for both 1s and 2s states despite differences in the envelope functions. We also observe multiple new dispersive Raman peaks including a peak at the WSe$_2$ A2s resonance that demonstrates non-linear dispersion and peak-splitting behavior that suggests that the dispersion relations for dark excitonic states at energies near the 2s state are extremely complex.

Mesoscale and Nanoscale Physics
Study of Phonons in Self-Organized Multiple Ge Quantum Dots

J. L. Liu,G. Jin,Y. S. Tang,Y. H. Luo,Y. Lu,K. L. Wang,D. P. Yu

DOI: https://doi.org/10.1007/s11664-000-0044-1

IF: 2.1

2000-01-01

Journal of Electronic Materials

Abstract:Raman scattering measurements were carried out in a self-organized multi-layered Ge quantum dot sample, which was grown using solid-source molecular-beam epitaxy, and consisted of 25 periods of 20-Å-high Ge quantum dots sandwiched by 20-nm Si spacers. The Ge-Ge optical phonon mode was found at 298.2 cm −1 , which was tuned by the phonon confinement and strain effects. Acoustic phonons related to Ge quantum dots have also been demonstrated.
The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

Long V. Le,Tran Thi Thu Huong,Tien-Thanh Nguyen,Xuan Au Nguyen,Thi Huong Nguyen,Sunglae Cho,Young Dong Kim,Tae Jung Kim

DOI: https://doi.org/10.3390/cryst14060539

IF: 2.7

2024-06-09

Crystals

Abstract:We report the absorption and photoluminescence spectra of GaSe single crystals in the near-edge region. The temperatures explored the range from 17 to 300 K. Specifically, at a temperature of 17 K, the photoluminescence spectrum reveals an interesting phenomenon: the Wannier-Mott exciton separates into two states. These states are a triplet state with an energy of 2.103 eV and a singlet state with an energy of 2.109 eV. The energy difference between these two states is 6 meV. Furthermore, the bound exciton (BX) can be localized at an energy of 2.093 eV. It is worth noting that its phonon replicas (BX-nLO) can be clearly distinguished up to the fourth order. Interestingly, the energy gaps between these replicas exhibit a consistent spacing of 7 ± 0.5 meV. This intriguing finding suggests a high-quality crystalline structure as well as a strong coupling between the phonon and BX-nLO. Additionally, at low temperatures, both the ground state (n = 1) at 2.11 eV and the excited state (n = 2) at 2.127 eV of free excitons can be observed.

materials science, multidisciplinary,crystallography
Probing hyperbolic and surface phonon-polaritons in 2D materials using Raman spectroscopy

Alaric Bergeron,Clément Gradziel,Richard Leonelli,Sébastien Francoeur

DOI: https://doi.org/10.1038/s41467-023-39809-3

IF: 16.6

2023-07-11

Nature Communications

Abstract:The hyperbolic dispersion relation of phonon-polaritons (PhPols) in anisotropic van der Waals materials provides high-momentum states, directional propagation, subdiffractional confinement, large optical density of states, and enhanced light-matter interactions. In this work, we use Raman spectroscopy in the convenient backscattering configuration to probe PhPol in GaSe, a 2D material presenting two hyperbolic regions separated by a double reststrahlen band. By varying the incidence angle, dispersion relations are revealed for samples with thicknesses between 200 and 750 nm. Raman spectra simulations confirm the observation of one surface and two extraordinary guided polaritons and match the evolution of PhPol frequency as a function of vertical confinement. GaSe appears to provide relatively low propagation losses and supports confinement factors matching or exceeding those reported for other 2D materials. Resonant excitation close to the 1s exciton singularly exalts the scattering efficiency of PhPols, providing enhanced scattering signals and means to probe the coupling of PhPols to other solid-state excitations.

multidisciplinary sciences
Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Bangfen Zhu,K. Chao

DOI: https://doi.org/10.1103/PhysRevB.36.4906

IF: 3.7

1987-01-01

Physical Review B

Abstract:The phonon modes and the Raman backscattering along the [001] direction in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As superlattices and heterostructures have been investigated with a linear-chain model. The sample is simulated with a computer, and then exact solutions are obtained numerically. The Raman intensity is calculated with the bond-polarizability approximation. The zone folding, the disorder effect, and the quantum-well confinement have been studied in detail and compared with experiments. In particular, the controversial experimental observations over the disorder effect on the Raman z(xx)z\ifmmode\bar\else\textasciimacron\fi{} intensity scattered by the topmost longitudinal-acoustical phonon mode is resolved.
Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering

Claire Blaga,Ángel Labordet Álvarez,Akshay Balgarkashi,Mitali Banerjee,Anna Fontcuberta i Morral,Mirjana Dimitrievska

DOI: https://doi.org/10.1039/d4na00399c

IF: 5.598

2024-08-18

Nanoscale Advances

Abstract:Tungsten diselenide (WSe 2 ) is a 2D semiconducting material, promising for novel optoelectronic and phononic applications. WSe 2 has complex lattice dynamics and phonon structure. Numerous discrepancies in the literature exist regarding the interpretation and identification of phonon modes. This work presents a complete investigation of the vibrational properties of 1L to 5L flakes and bulk WSe 2 using multi-wavelength Raman spectroscopy. We especially highlight measurements using 785 nm excitation, which have not been performed before. These allow us to solve inconsistences in the literature in terms of defect-activated non- Γ point single phonon modes and Breit–Wigner–Fano type resonance. We identify 35 Raman peaks per flake thickness, which we attribute to either one-phonon or multi-phonon modes, including two-phonon scattering due to a van Hove singularity (vHs). The measurements are in excellent agreement with the theoretical predictions. Using photoluminescence measurements, we identify photon-exciton coupling leading to resonant Raman scattering, suggesting wavelength laser excitations best suited for further investigations of specific WSe 2 flake thicknesses. Finally, we report the observation of phonon-cascades for all WSe 2 flake thicknesses, indicating strong phonon–electron interactions during early carrier relaxation processes in WSe 2 . This research provides a solid foundation and reference for future investigations of the vibrational properties of WSe 2 , paving the way for further development of this material towards applications.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

J. He,J. Sapriel,R. Azoulay,G. Le Roux,H. Brugger

DOI: https://doi.org/10.1117/12.947315

1988-01-01

Abstract:A combined Brillouin-Raman study has been performed in Si-Si1-xGex and GaAs-Al As superlattices. The photoelastic constant of Si0.5Ge0.5 with respect to Si for several light wavelengths is measured for the first time by light scattering experiments. The frequencies, linewidths and relative intensities of the superlattice acoustic phonon modes are carefully investigated, especially for scattering wavevectors in the vicinity of Brillouin zone boundaries. The acoustic and optical absorptions are found to have particular effects on the frequencies and relative intensities for scattering wavevectors in these regions.
Raman spectra and phonon structures of BaGa4Se7 crystal

Yan Yin,Busheng Wang,Yiwen E,Jiyong Yao,Li Wang,Xuedong Bai,Wuming Liu

DOI: https://doi.org/10.1038/s42005-020-0302-x

2020-02-11

Communications Physics

Abstract:Abstract BaGa 4 Se 7 is a promising nonlinear optical crystal at infrared frequencies and shows interesting terahertz phonon-polaritons and high nonlinear coefficients for terahertz generation. Phonons are the key players in infrared absorptions and the photon-phonon resonance phenomena at terahertz frequencies. Here, we study the phonon structures of BaGa 4 Se 7 crystal, with polarized Raman spectroscopy and theoretical calculations for phonon dispersion curves, density of states and vibration modes. An interesting phonon gap separates the modes with still or vibrating Ba atoms. We also determine the nine strongest Raman peaks’ vibration modes and Raman tensors. Our Raman mode assignments and phonon calculations show consistencies in phonon energies, phonon types, and vibration directions. Above knowledge provides a new case example for phonon gaps, offers a complete picture of the phonon structures of BaGa 4 Se 7 , and helps us understand phonon gaps, monoclinic crystals, and its phenomena at infrared and terahertz frequency ranges.

physics, multidisciplinary
Giant-Shell CdSe/CdS Nanocrystals: Exciton Coupling to Shell Phonons Investigated by Resonant Raman Spectroscopy

Miao-Ling Lin,Mario Miscuglio,Anatolii Polovitsyn,Yuchen Leng,Beatriz Martín-García,Iwan Moreels,Ping-Heng Tan,Roman Krahne

DOI: https://doi.org/10.1021/acs.jpclett.8b03211

2020-04-24

Abstract:The interaction between excitons and phonons in semiconductor nanocrystals plays a crucial role in the exciton energy spectrum and dynamics, and thus in their optical properties. We investigate the exciton2 phonon coupling in giant-shell CdSe/CdS core-shell nanocrystals via resonant Raman spectroscopy. The Huang-Rhys parameter is evaluated by the intensity ratio of the longitudinal-optical (LO) phonon of CdS with its first multiscattering (2LO) replica. We used four different excitation wavelengths in the range from the onset of the CdS shell absorption to well above the CdS shell band edge to get insight into resonance effects of the CdS LO phonon with high energy excitonic transitions. The isotropic spherical giant-shell nanocrystals show consistently stronger exciton-phonon coupling as compared to the anisotropic rod-shaped dot-in-rod (DiR) architecture, and the 2LO/LO intensity ratio decreases for excitation wavelengths approaching the CdS band edge. The strong exciton-phonon coupling in the spherical giant-shell nanocrystals can be related to the delocalization of the electronic wave functions. Furthermore, we observe the radial breathing modes of the GS nanocrystals and their overtones by ultralow frequency Raman spectroscopy with nonresonant excitation, using laser energies well below the band gap of the heteronanocrystals, and highlight the differences between higher order

Chemical Physics,Materials Science
Optical and Acoustic Phonon Modes in Self-Organized Ge Quantum Dot Superlattices

JL Liu,G Jin,YS Tang,YH Luo,KL Wang,DP Yu

DOI: https://doi.org/10.1063/1.125825

IF: 4

2000-01-01

Applied Physics Letters

Abstract:Raman scattering measurements were carried out in self-organized Ge quantum dot superlattices. The samples consisted of 25 periods of Ge quantum dots with different dot sizes sandwiched by 20 nm Si spacers, and were grown using solid-source molecular-beam epitaxy. Optical phonon modes were found to be around 300 cm−1, and a dependence of the Raman peak frequency on the size of dots was evidenced in good agreement with a prediction based on phonon confinement and strain effects. Acoustic phonons related to the Ge quantum dots have also been observed.
RAMAN SPECTRA FROM ACOUSTIC PHONONS IN NEARLY PERIODIC SiGe/Si SUPERLATTICES

LIU XIAO-HAN, HUANG DA-MING, WANG XING-JUN, ZHANG CHUN-HONG, ZHU HAI-JUN, JIANG ZUI-MIN, WANG XUN

DOI: https://doi.org/10.7498/aps.46.1863

1997-01-01

Abstract:The transfer matrix method has been used to calculate the Raman spectra of acoustic phonons in nearly periodic SiGe/Si superlattices,including the supperlattices with finite number of periods,the coupled supperlattices,and those with layer-thickness fluctuations.The properties of the above nearly periodic systems are found to be very different from those of periodic or disordered systems.In stead of the folded acoustic phonons appearing in the Raman spectra from ideal superlattices (main peak),the other satellite peaks are also observable in the finite system due to the existence of boundaries.For the coupled superlattices,the main peaks split into two due to the interference of the acoustic waves in different superlattices.For the superlattices with layer-thickness fluctuation,the main Raman peaks show asymmetric broadening and a tail towards high wave number are observable.The calculated results are compared to the measured spectra and good agreement between them is obtained.
Resonant Raman scattering off neutral quantum dots

Alain Delgado,Augusto Gonzalez,Eduardo Menéndez-Proupin

DOI: https://doi.org/10.1103/physrevb.65.155306

IF: 3.7

2002-03-26

Physical Review B

Abstract:Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number N=42 of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density excitations) of similar magnitude as the amplitudes related to weakly collective or single-particle excitations. As a function of the incident laser frequency or the magnetic field, they are rapidly varying amplitudes. It is argued that strong Raman peaks should come out in the spin-density channels, not related to valence-band mixing effects in the intermediate states.

physics, condensed matter, applied,materials science, multidisciplinary
Resonance-Induced Anomalies in Temperature-Dependent Raman Scattering of PdSe

Paul H.M. van Loosdrecht,Omar Abdul-Aziz,Daniel Wolverson,Charles James Sayers,Ettore Carpene,Fulvio Parmigiani,Hamoon Hedayat

DOI: https://doi.org/10.1039/d4tc02012j

IF: 6.4

2024-06-25

Journal of Materials Chemistry C

Abstract:We report a comprehensive Raman study of the phonon behavior in PdSe in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon A mode, accompanied by a suppression of the in-plane A and B modes. This intriguing behavior is attributed to a temperature-dependent resonant excitation effect. The results are supported by density functional theory (DFT) calculations, which demonstrate that the electron-phonon coupling for the phonon modes varies and is strongly associated with the relevant electronic states. Furthermore, nonlinear frequency shifts are identified in all modes, indicating the decay of an optical phonon into multiple acoustic phonons. The study of Raman emission reported here, complemented by linear optical spectroscopy, reveals an unexpected scenario for the vibrational properties of PdSe that holds substantial promise for future applications in PdSe -based optoelectronics.

materials science, multidisciplinary,physics, applied
The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

I. V. Kucherenko,V. S. Vinogradov,N. N. Mel'nik,L. V. Arapkina,V. A. Chapnin,K. V. Chizh,V. A. Yuryev

DOI: https://doi.org/10.48550/arXiv.1010.1927

2010-10-10

Materials Science

Abstract:The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band $\Lambda_3$ and the conduction band $\Lambda_1$ (the E1 and E1 + $\Delta_1$ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of 10 \r{A}. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E1 and E1 + $\Delta_1$ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^-1 with a decrease in the thickness of the Ge layer from 10 to 6 \r{A} due to the spatial-confinement effect. The optimum thickness of the Ge layer, for which the size dispersion of quantum dots is minimum, is determined.
Raman spectrum and phonon thermal transport in van der Waals semiconductor GaPS4

Sihan Yan,Zeng Liu,Jia-Han Zhang,Songrui Wei,Shaohui Zhang,Xin Chen,Chee-Keong Tan,Shan Li,Weihua Tang

DOI: https://doi.org/10.1063/5.0216986

IF: 4

2024-07-08

Applied Physics Letters

Abstract:The emergent van der Waals semiconductor GaPS4 is heralding frontiers for gallium-based semiconductors. Despite its potential, the intricacies of its Raman spectrum and phonon heat transport remain elusive. In this research, experimental and theoretical methods are employed to give a comprehensive portrayal. The Raman spectra and phonon calculations obtained were cross-validated, affirming the study's credibility. A total of 28 Raman peaks were identified, with all phonon irreducible representations delineated. Advanced calculations unveiled notable shifts in the transition of GaPS4 from bulk to monolayer. During this process, phonons undergo a red shift, and the vibration contributions of different atoms change. The lifetime and group velocity of low wavenumber phonons are markedly reduced, suppressing the thermal conductivity in the monolayer. The thermal conductivity of GaPS4 bulk at 300 K is 0.5 W/m K, and 0.13 W/m K for monolayer, while the thermal conductivity in the cleavage direction is lower. These findings offer a detailed account of the complex Raman spectra and phonon thermal transport properties of GaPS4, setting the stage for its subsequent exploration and prospective applications in electronic and thermal devices, and contributing to enriching condensed matter theory of phonon thermal transport in van der Waals materials.

physics, applied
Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

M. Zinkiewicz,M. Grzeszczyk,T. Kazimierczuk,M. Bartos,K. Nogajewski,W. Pacuski,K. Watanabe,T. Taniguchi,A. Wysmołek,P. Kossacki,M. Potemski,A. Babiński,M. R. Molas

2023-08-16

Abstract:Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, $i.e.$ in-plane E$'$ and out-of-plane A$'_1$, but the appearance of 1$^{st}$, 2$^{nd}$, and higher-order phonon modes is recognised. The intensity profiles of the A$'_1$ modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe$_2$ ML, the A$'_1$ mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, $i.e.$ bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs.

Mesoscale and Nanoscale Physics,Materials Science

Multiphonon Resonant Raman-Scattering Gase

Resonant Raman Study of Trigonal Se

Exciton Enhanced Raman Scattering of LO Phonons in Trigonal Se

Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation*

Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers

Study of Phonons in Self-Organized Multiple Ge Quantum Dots

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

Probing hyperbolic and surface phonon-polaritons in 2D materials using Raman spectroscopy

Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Raman spectra and phonon structures of BaGa4Se7 crystal

Giant-Shell CdSe/CdS Nanocrystals: Exciton Coupling to Shell Phonons Investigated by Resonant Raman Spectroscopy

Optical and Acoustic Phonon Modes in Self-Organized Ge Quantum Dot Superlattices

RAMAN SPECTRA FROM ACOUSTIC PHONONS IN NEARLY PERIODIC SiGe/Si SUPERLATTICES

Resonant Raman scattering off neutral quantum dots

Resonance-Induced Anomalies in Temperature-Dependent Raman Scattering of PdSe

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Raman spectrum and phonon thermal transport in van der Waals semiconductor GaPS4

Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides