Covalent-bonding-induced strong phonon scattering in the atomically thin WSe2 layer
Young-Gwan Choi,Do-Gyeom Jeong,H. I. Ju,C. J. Roh,Geonhwa Kim,Bongjin Simon Mun,Tae Yun Kim,Sang-Woo Kim,J. S. Lee
DOI: https://doi.org/10.1038/s41598-019-44091-9
IF: 4.6
2019-05-20
Scientific Reports
Abstract:In nano-device applications using two-dimensional (2D) van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we examine a cross-plane thermal transport through mono-layered (<i>n</i> = 1) and bi-layered (<i>n</i> = 2) WSe<sub>2</sub> flakes which are sandwiched by top metal layers of Al, Au, and Ti and the bottom Al<sub>2</sub>O<sub>3</sub> substrate. In these nanoscale structures with hetero- and homo-junctions, we observe that the thermal boundary resistance (TBR) is significantly enhanced as the number of WSe<sub>2</sub> layers increases. In particular, as the metal is changed from Al, to Au, and to Ti, we find an interesting trend of TBR depending on the WSe<sub>2</sub> thickness; when referenced to TBR for a system without WSe<sub>2</sub>, TBR for <i>n</i> = 1 decreases, but that for <i>n</i> = 2 increases. This result clearly demonstrates that the stronger bonding for Ti leads to a better thermal conduction between the metal and the WSe<sub>2</sub> layer, but in return gives rise to a large mismatch in the phonon density of states between the first and second WSe<sub>2</sub> layers so that the WSe<sub>2</sub>-WSe<sub>2</sub> interface becomes a major thermal resistance for <i>n</i> = 2. By using photoemission spectroscopy and optical second harmonic generation technique, we confirm that the metallization induces a change in the valence state of W-ions, and also recovers a non-centrosymmetry for the bi-layered WSe<sub>2</sub>.
multidisciplinary sciences