Exciton Enhanced Raman Scattering of LO Phonons in Trigonal Se

N. Amer,Y. Petroff,Y. R. Shen,P. Y. Yu

DOI: https://doi.org/10.1007/978-3-322-94774-1_80

1974-01-01

Abstract:Resonance enhancements in the Raman cross-section of longitudinal optical (LO) phonons in trigonal Se have been measured around its excitonic absorption edge at low temperatures. Our results are explained in terms of resonant scattering of LO phonons via the Fröhlich interaction.

What problem does this paper attempt to address?

Resonant Raman Study of Trigonal Se

PY YU,N AMER,YR SHEN,Y PETROFF

DOI: https://doi.org/10.1103/physrevb.14.644

1976-01-01

Abstract:Resonant Raman scattering has been studied in trigonal Se at low temperatures in the region of its indirect and direct excitonic absorption edges. Whereas no enhancement in Raman cross sections was observed at the indirect absorption edge, strong dispersion was found in the region of the direct excitons. In the vicinity of the direct absorption edge Raman cross sections of one-phonon modes decreased monotonically with increase in photon energy in all three scattering configurations studied. This monotonic decrease in Raman cross sections was explained qualitatively by resonant cancellation between a constant background and a dispersive term due to the 2.20-eV peak in the reflectivity spectrum of Se. Resonant enhancements were observed at the direct excitons only in the scattering configuration where the incident and scattered photons are both polarized perpendicular to the $c$ axis. The enhancements are explained quantitatively by a simple model involving two direct excitons of Se as resonant intermediate states. We have also determined directly the longitudinal and transverse mode splitting of the low-energy $E$ mode in trigonal Se as 7 \ifmmode\pm\else\textpm\fi{} 2 ${\mathrm{cm}}^{\ensuremath{-}1}$.
Resonant Raman scattering by two LO phonons in InSb at the E1 transition

P.Y. Yu,Y.R. Shen

DOI: https://doi.org/10.1016/0038-1098(74)90731-5

IF: 1.934

1974-01-01

Solid State Communications

Abstract:We have observed resonant Raman scattering of the 2LO phonon mode in InSb in the region of the E1 transition. The resonant enhancement peak was found to be up-shifted by 19±4 meV from that of the one-phonon mode or by ∼ 60 meV from the E1 peak in the optical spectrum of InSb. Our experimental results are explained qualitatively by the double resonance theory.
Enhanced Raman scattering by quasi-phase-matched processes in a χ(2) photonic crystal

Xu, P.,Zhu, S.N.

DOI: https://doi.org/10.1109/CLEO.2006.4628059

2006-01-01

Abstract:An intense comb-shaped phonon-polariton Raman spectra were obtained from a two-dimensional nonlinear chi(2) photonic crystal - a hexagonally poled LiTaO3 crystal. The work presents a novel method to study the inelastic scattering in a nonlinear medium.
Multiphonon Resonant Raman-Scattering Gase

J. Camassel,T.C. Chiang,Y.R. Shen,J.-P. Voitchovsky,N.M. Amer

DOI: https://doi.org/10.1016/0038-1098(76)90047-8

IF: 1.934

1976-01-01

Solid State Communications

Abstract:Multiphonon resonant Raman scattering up to 4 phonons in GaSe has been measured. The results are interpreted by a simple cascade theory. It is shown that the dispersion of RRS here is dominated by resonances with the exciton states.
Multiphonon Resonant Raman Scattering in N‐doped ZnO

Xiaming Zhu,Huizhen Wu,Zijian Yuan,Jinfang Kong,Wenzhong Shen

DOI: https://doi.org/10.1002/jrs.2385

IF: 2.727

2009-01-01

Journal of Raman Spectroscopy

Abstract:Multiphonon resonant Raman scattering in N-doped ZnO films was studied, and an enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed at room temperature. The resonant Raman scattering intensity of the 1LO phonon in N-doped ZnO appears three times as strong as that of undoped ZnO, which mainly arises from the defect-induced Raman scattering caused by N-doping. The nature of the 1LO phonon at 578 cm(-1) is interpreted as a quasimode with mixed A(1) and E-1 symmetry because of the defects formed in the ZnO lattice. In addition, the previously neglected impurity-induced two-LO-phonon scattering process was clearly observed in N-doped ZnO. Copyright (C) 2009 John Wiley & Sons, Ltd.
Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers

Liam P. McDonnell,Jacob Viner,Pasqual Rivera,Xiaodong Xu,David C. Smith

DOI: https://doi.org/10.1088/2053-1583/ab98f0

2020-06-11

Abstract:We present a high-resolution resonance Raman study of hBN encapsulated MoSe$_2$ and WSe$_2$ monolayers at 4 K using excitation energies from 1.6 eV to 2.25 eV. We report resonances with the WSe$_2$ A2s and MoSe$_2$ A2s and B2s excited Rydberg states despite their low oscillator strength. When resonant with the 2s states we identify new Raman peaks which are associated with intravalley scattering between different Rydberg states via optical phonons. By calibrating the Raman scattering efficiency and separately constraining the electric dipole matrix elements, we reveal that the scattering rates for k=0 optical phonons are comparable for both 1s and 2s states despite differences in the envelope functions. We also observe multiple new dispersive Raman peaks including a peak at the WSe$_2$ A2s resonance that demonstrates non-linear dispersion and peak-splitting behavior that suggests that the dispersion relations for dark excitonic states at energies near the 2s state are extremely complex.

Mesoscale and Nanoscale Physics
Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Qing Zhang,Xinfeng Liu,Muhammad Iqbal Bakti Utama,Jun Zhang,María de la Mata,Jordi Arbiol,Yunhao Lu,Tze Chien Sum,Qihua Xiong

DOI: https://doi.org/10.1021/nl3037867

IF: 10.8

2012-01-01

Nano Letters

Abstract:Electron phonon-coupling plays a key role in a variety of elemental excitations and their interactions in semiconductor nanostructures. Here we demonstrate that the relaxation rate of free excitons in a single ZnTe nanobelt (NB) is considerably enhanced via a nonthermalized hot-exciton emission process as a result of an ultrastrong electron-phonon coupling. Using time-resolved photoluminescence (PL) spectroscopy and resonant Raman spectroscopy (RRS), we present a comprehensive study on the identification and the dynamics of free/bound exciton recombination and the electron-phonon interactions in crystalline ZnTe NBs. Up to tenth-order longitudinal optical (LO) phonons are observed in Raman spectroscopy, indicating an ultrastrong electron-phonon coupling strength. Temperature-dependent PL and RRS spectra suggest that electron phonon coupling is mainly contributed from Light hole (LH) free excitons. With the presence of hot-exciton emission, two time constants (similar to 80 and similar to 18 ps) are found in photoluminescence decay curves, which are much faster than those in many typical semiconductor nanostructures. Finally we prove that under high excitation power amplified spontaneous emission (ASE) originating from the electron hole plasma occurs, thereby opening another radiative decay channel with an ultrashort lifetime of few picoseconds.
Raman spectroscopy of optical phonons confined in semiconductor quantum dots and nanocrystals

A. G. Rolo,M. I. Vasilevskiy

DOI: https://doi.org/10.1002/jrs.1746

IF: 2.727

2007-01-01

Journal of Raman Spectroscopy

Abstract:This paper gives an overview of theoretical and experimental results on Raman‐active optical phonon modes confined in nearly spherical nanocrystals (NCs) of polar semiconductor materials with cubic crystal structure. A systematic consideration of the effect of reduced dimensionality on both electrons and phonons is presented. The theoretical approach is based on a continuum lattice dynamics model and the effective mass approximation for electronic states in the NCs. Calculated resonant and non‐resonant Raman scattering spectra are compared to experimental data stressing the effects of phonon confinement, type of excitation, polaron correction to the exciton spectrum enhanced because of the reduced dimensionality, and individual features of the NC material. Copyright © 2007 John Wiley & Sons, Ltd.

spectroscopy
Resonance Raman Scattering at the Forbidden Yellow Exciton Incu2o

PY YU,YR SHEN,Y PETROFF,LM FALICOV

DOI: https://doi.org/10.1103/physrevlett.30.283

IF: 8.6

1973-01-01

Physical Review Letters

Abstract:We report strong resonance enhancement in the 220-${\mathrm{cm}}^{\ensuremath{-}1}$ Raman line of ${\mathrm{Cu}}_{2}$O at the ${{\ensuremath{\Gamma}}_{12}}^{\ensuremath{-}}$-phonon-assisted absorption threshold of the forbidden $1s$ yellow exciton. A consistent theoretical interpretation is presented. It shows that the line is due to scattering of two ${{\ensuremath{\Gamma}}_{12}}^{\ensuremath{-}}$ phonons and the resonance enhancement is strongly affected by the exciton lifetime. The latter effect has never been considered or observed before in resonance Raman scattering.
Exciton-phonon Coupling in Individual ZnTe Nanorods Studied by Resonant Raman Spectroscopy

Q. Zhang,J. Zhang,M. I. B. Utama,B. Peng,M. de la Mata,J. Arbiol,Qihua Xiong

DOI: https://doi.org/10.1103/physrevb.85.085418

IF: 3.7

2012-01-01

Physical Review B

Abstract:The exciton-phonon coupling in high-quality cubic phase zinc telluride (ZnTe) nanorods (NRs) is investigated by resonant micro-Raman spectroscopy near the direct bandgap of ZnTe. The scattering cross section of longitudinal optical (LO) phonon is enhanced significantly in the resonant process, where the enhancement factor of LO modes is much higher than that of the transverse optical (TO) modes, indicating a dominant Frohlich electron-phonon interaction mechanism. Up to fifth-order LO phonons are observed by resonant Raman scattering at room temperature. The Huang-Rhys factor of individual NRs-and thus the exciton-LO coupling strengths-is evaluated, showing increasing with the NR diameter. Surface optical (SO) phonon and its high-order overtones are observed between nLO and (n - 1)LO + TO for the first time, whose positions are consistent with a dielectric continuum model. Strong acoustic phonon-exciton coupling induces a high-frequency shoulder above each nLO peaks with two maxima located around 14 cm(-1) and 32 cm(-1), which are assigned to transverse acoustic and longitudinal acoustic phonons, respectively. The resonant multiphonon scattering process involving acoustic and LO phonons is discussed based on an exciton-intermediated cascade model, where a scattering sequence of acoustic phonon followed by LO phonons is favorable. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems, especially in the scarcely documented ZnTe compound, facilitating the development and optimization of NR-based optoelectronic devices.
Resonant Raman Scattering Near Excitonic Transitions

Y. R. Shen

DOI: https://doi.org/10.1007/978-1-4613-4301-1_36

1976-01-01

Abstract:We use the cases of Cu2O and MnF2 to illustrate the principles and usefulness of the resonant Raman technique. We show that the resonant Raman results can give not only a better understanding of the phonon (magnon) structure but also more details about the excitonic structure and the coupling between excitons (or electrons and holes) and phonons (magnons).
Dynamical resonance quench and Fano interference in spontaneous Raman scattering from quasiparticle and collective excitations

J. Zhu,R.B. Versteeg,P. Padmanabhan,P.H.M. van Loosdrecht

DOI: https://doi.org/10.1103/PhysRevB.99.094305

2019-02-07

Abstract:Time-resolved spontaneous Raman spectroscopy serves as a probe for incoherent quasiparticle and collective excitation dynamics, and allows to distinguish symmetry changes across a photoinduced phase transition through the inelastic light scattering selection rules. Largely unexplored is the role of the Raman resonance enhancement in the time-domain, and the transient interaction between scattering from quasiparticles and collective excitations, with the latter interaction leading to a Fano interference. In this work, we report on the observation of a phonon Raman tensor quench and Fano interference after strong photoexcitation of an intrinsic semiconductor. We observed a dynamic phonon scattering rate asymmetry and spectral asymmetry through simultaneous detection of both the anti-Stokes and Stokes response. The asymmetric phonon scattering rate is ascribed to the combined effect of the transient phonon population and the reduction of the phonon Raman tensor resulting from the photoexcited hole population. This same hole population results in a strong enhancement of the Fano spectral asymmetry.

Materials Science
Resonant Coupling of Bound Excitons with LO Phonons in ZnO: Excitonic Polaron States and Fano Interference.

SJ Xu,SJ Xiong,SL Shi

DOI: https://doi.org/10.1063/1.2140701

IF: 4.304

2005-01-01

The Journal of Chemical Physics

Abstract:We report on a photoluminescence observation of robust excitonic polarons due to resonant coupling of exciton and longitudinal optical (LO) phonon as well as Fano-type interference in high quality ZnO crystal. At low enough temperatures, resonant coupling of excitons and LO phonons leads to not only traditional Stokes lines (SLs) but also up to second-order anti-Stokes lines (ASLs) besides the zero-phonon line (ZPL). The SLs and ASLs are found to be not mirror symmetric with respect to the ZPL, strongly suggesting that they are from different coupling states of exciton and phonons. Besides these spectral features showing the quasiparticle properties of exciton-phonon coupling system, the first-order SL is found to exhibit characteristic Fano lineshape, caused by quantum interference between the LO components of excitonic polarons and the continuous phonon bath. These findings lead to a new insight into fundamental effects of exciton-phonon interactions.
Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

E Menéndez-Proupin,J L Peña,C Trallero-Giner

DOI: https://doi.org/10.1088/0268-1242/13/8/007

IF: 2.048

1998-08-01

Semiconductor Science and Technology

Abstract:Resonant Raman scattering in spherical semiconductor quantum dots is theoretically investigated. The Fröhlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) uncorrelated electron-hole pairs in the strongly size-dependent quantized regime; (II) Wannier-Mott excitons in an infinite potential well; (III) excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolute values of the scattering intensities and substantially modify the Raman lineshape, even in the strong confinement regime.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Raman spectra and phonon structures of BaGa4Se7 crystal

Yan Yin,Busheng Wang,Yiwen E,Jiyong Yao,Li Wang,Xuedong Bai,Wuming Liu

DOI: https://doi.org/10.1038/s42005-020-0302-x

2020-02-11

Communications Physics

Abstract:Abstract BaGa 4 Se 7 is a promising nonlinear optical crystal at infrared frequencies and shows interesting terahertz phonon-polaritons and high nonlinear coefficients for terahertz generation. Phonons are the key players in infrared absorptions and the photon-phonon resonance phenomena at terahertz frequencies. Here, we study the phonon structures of BaGa 4 Se 7 crystal, with polarized Raman spectroscopy and theoretical calculations for phonon dispersion curves, density of states and vibration modes. An interesting phonon gap separates the modes with still or vibrating Ba atoms. We also determine the nine strongest Raman peaks’ vibration modes and Raman tensors. Our Raman mode assignments and phonon calculations show consistencies in phonon energies, phonon types, and vibration directions. Above knowledge provides a new case example for phonon gaps, offers a complete picture of the phonon structures of BaGa 4 Se 7 , and helps us understand phonon gaps, monoclinic crystals, and its phenomena at infrared and terahertz frequency ranges.

physics, multidisciplinary
Fano Resonance in Phonon-Assisted Photoluminescence Spectra of Wide Gap Polar Semiconductors

SJ Xu,SJ Xiong,SL Shi,KJ Jin

DOI: https://doi.org/10.1117/12.667659

2006-01-01

Abstract:We report a photoluminescence observation of robust excitonic polarons due to strong coupling of exciton and longitudinal optical (LO) phonon as well as Fano-type interference in high quality ZnO crystal. At low enough temperatures, the strong coupling of excitons and LO phonons leads to not only traditional Stokes lines (SLs) but also up to second-order anti-Stokes lines (ASLs) besides the zero-phonon line (ZPL). The SLs and ASLs are found to be not mirror symmetric with respect to the ZPL, strongly suggesting that they are from different coupling states of exciton and phonons. It is more interesting that a new group of peaks, including a ZPL and several SLs, are observed. The observations can be explained with a newly developed theory in which this group is attributed to the ground excitonic polaron state and the other group is from the excited polaron states with LO phonon components partially decaying into environal phonon modes. Besides these spectral features showing the quasiparticle properties of exciton-phonon coupling system, the first-order SL is found to exhibit characteristic Fano lineshape, caused by quantum interference between the LO components of excitonic polarons and the environal phonons. These findings lead to a new insight into fundamental effects of exciton-phonon interaction.
Experimental Studies of Enhanced Raman Scattering from a Hexagonally Poledlitao3crystal

P Xu,SN Zhu,XQ Yu,SH Ji,ZD Gao,G Zhao,YY Zhu,NB Ming

DOI: https://doi.org/10.1103/physrevb.72.064307

2005-01-01

Abstract:The study of phonon-polariton Raman scattering continues to be a challenge, in part because of the difficulty of measuring relatively low intensity of scattered signals. This paper reports the experimental results on phonon-polariton Raman scattering in a hexagonally poled LiTaO3 crystal, showing the anti-Stokes and Stokes Raman signal intensities are significantly enhanced by cascading a couple of quasi-phase-matching processes where the coherent polariton fields are driven and the enhanced scattering signals are further amplified.
Resonance-Induced Anomalies in Temperature-Dependent Raman Scattering of PdSe

Paul H.M. van Loosdrecht,Omar Abdul-Aziz,Daniel Wolverson,Charles James Sayers,Ettore Carpene,Fulvio Parmigiani,Hamoon Hedayat

DOI: https://doi.org/10.1039/d4tc02012j

IF: 6.4

2024-06-25

Journal of Materials Chemistry C

Abstract:We report a comprehensive Raman study of the phonon behavior in PdSe in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon A mode, accompanied by a suppression of the in-plane A and B modes. This intriguing behavior is attributed to a temperature-dependent resonant excitation effect. The results are supported by density functional theory (DFT) calculations, which demonstrate that the electron-phonon coupling for the phonon modes varies and is strongly associated with the relevant electronic states. Furthermore, nonlinear frequency shifts are identified in all modes, indicating the decay of an optical phonon into multiple acoustic phonons. The study of Raman emission reported here, complemented by linear optical spectroscopy, reveals an unexpected scenario for the vibrational properties of PdSe that holds substantial promise for future applications in PdSe -based optoelectronics.

materials science, multidisciplinary,physics, applied
Excitonic Polaron States and Fano Interference in Phonon-Assisted Photoluminescence of Bound Excitons in ZnO

Shi-Jie Xu,Shi-Jie Xiong,Shen-Lei Shi

DOI: https://doi.org/10.48550/arxiv.cond-mat/0501723

2005-01-01

Abstract:We report a photoluminescence observation of robust excitonic polarons due to strong coupling of exciton and longitudinal optical (LO) phonon as well as Fano-type interference in high quality ZnO crystal. At low enough temperatures, the strong coupling of excitons and LO phonons leads to not only traditional Stokes lines (SLs) but also up to second-order anti-Stokes lines (ASLs) besides the zero-phonon line (ZPL). The SLs and ASLs are found to be not mirror symmetric with respect to the ZPL, strongly suggesting that they are from different coupling states of exciton and phonons. It is more interesting that a new group of peaks, including a ZPL and several SLs, are observed. The observations can be explained with a newly developed theory in which this group is attributed to the ground excitonic polaron state and the other group is from the excited polaron states with LO phonon components partially decaying into environal phonon modes. Besides these spectral features showing the quasiparticle properties of exciton-phonon coupling system, the first-order SL is found to exhibit characteristic Fano lineshape, caused by quantum interference between the LO components of excitonic polarons and the environal phonons. These findings lead to a new insight into fundamental effects of exciton-phonon interaction.
Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors

A. V. Rodina,E. L. Ivchenko

DOI: https://doi.org/10.1103/PhysRevB.106.245202

2022-10-20

Abstract:We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exciton region. Scattering mechanisms involving localized excitons, biexcitons and exciton polaritons as intermediate states has been examined, the spin-flip Raman scattering by polaritons being a novel mechanism. The derived equations are presented in the invariant form allowing one for the analysis of the dependence of scattering efficiency on the polarization of the initial and scattered light and on the orientation of the external magnetic field.

Materials Science

Exciton Enhanced Raman Scattering of LO Phonons in Trigonal Se

Resonant Raman Study of Trigonal Se

Resonant Raman scattering by two LO phonons in InSb at the E1 transition

Enhanced Raman scattering by quasi-phase-matched processes in a χ(2) photonic crystal

Multiphonon Resonant Raman-Scattering Gase

Multiphonon Resonant Raman Scattering in N‐doped ZnO

Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe$_2$ and WSe$_2$ Monolayers

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Raman spectroscopy of optical phonons confined in semiconductor quantum dots and nanocrystals

Resonance Raman Scattering at the Forbidden Yellow Exciton Incu2o

Exciton-phonon Coupling in Individual ZnTe Nanorods Studied by Resonant Raman Spectroscopy

Resonant Raman Scattering Near Excitonic Transitions

Dynamical resonance quench and Fano interference in spontaneous Raman scattering from quasiparticle and collective excitations

Resonant Coupling of Bound Excitons with LO Phonons in ZnO: Excitonic Polaron States and Fano Interference.

Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

Raman spectra and phonon structures of BaGa4Se7 crystal

Fano Resonance in Phonon-Assisted Photoluminescence Spectra of Wide Gap Polar Semiconductors

Experimental Studies of Enhanced Raman Scattering from a Hexagonally Poledlitao3crystal

Resonance-Induced Anomalies in Temperature-Dependent Raman Scattering of PdSe

Excitonic Polaron States and Fano Interference in Phonon-Assisted Photoluminescence of Bound Excitons in ZnO

Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors