Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

E Menéndez-Proupin,J L Peña,C Trallero-Giner
DOI: https://doi.org/10.1088/0268-1242/13/8/007
IF: 2.048
1998-08-01
Semiconductor Science and Technology
Abstract:Resonant Raman scattering in spherical semiconductor quantum dots is theoretically investigated. The Fröhlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) uncorrelated electron-hole pairs in the strongly size-dependent quantized regime; (II) Wannier-Mott excitons in an infinite potential well; (III) excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolute values of the scattering intensities and substantially modify the Raman lineshape, even in the strong confinement regime.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
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