Abstract:A number of physical processes involving quantum dots depend critically upon the "evanescent" electron eigenstate wave function that extends outside of the material surface into the surrounding region. These processes include electron tunneling through quantum dots, as well as interactions between multiple quantum dot structures. In order to unambiguously determine these evanescent fields, appropriate boundary conditions have been developed to connect the electronic solutions interior to the semiconductor quantum dot to exterior vacuum solutions. In standard envelope function theory, the interior wave function consists of products of band edge and envelope functions, and both must be considered when matching to the external solution. While the envelope functions satisfy tractable equations, the band edge functions are generally not known. In this work, symmetry arguments in the spherically symmetric approximation are used in conjunction with the known qualitative behavior of bonding and antibonding orbitals to catalog the behavior of the band edge functions at the unit cell boundary. This physical approximation allows consolidation of the influence of the band edge functions to two simple surface parameters that are incorporated into the boundary conditions and are straightforwardly computed by using numerical first-principles quantum techniques. These new boundary conditions are employed to analyze an isolated spherically symmetric semiconductor quantum dot in vacuum within the analytical model of Sercel and Vahala [Phys. Rev. Lett. 65, 239 (1990); Phys. Rev. B 42, 3690 (1990)]. Results are obtained for quantum dots made of GaAs and InP, which are compared with ab initio calculations that have appeared in the literature.

Quantum effects in the Raman spectrum of a quantum dot

Semiquantitative theory of electronic Raman scattering from medium-size quantum dots

The Effect of Biexciton, Wetting Layer Leakage and Auger Capture on Rabi Oscillation Damping in Quantum Dots

Quality Factor and Decoherence Mechanism of Rabi Oscillation in Semiconductor Quantum Dot

Exciton and confinement potential effects on the resonant Raman scattering in quantum dots

Rayleigh-Schrödinger perturbation theory for electron-phonon interaction in two dimensional quantum dots with asymmetric parabolic potential

Resonant Raman scattering off neutral quantum dots

Resonant hyper-Raman scattering in spherical quantum dots

Raman scattering in quantum disks: enhanced efficiency of the electron-phonon interaction due to non-adiabaticity

One phonon assisted electron Raman scattering in a cylindrical semiconductor quantum dot

Raman spectroscopy of optical phonons confined in semiconductor quantum dots and nanocrystals

Intraband resonance Raman scattering in anisotropic quantum dots

Bichromatic Resonant Light Scattering from A Quantum Dot

Exact-Diagonalization Studies of Inelastic Light Scattering in Self-Assembled Quantum Dots

Quantum Dot Properties in the Multiband Envelope-Function Approximation Using Boundary Conditions Based Upon First-Principles Quantum Calculations

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Full counting statistics of quantum dot resonance fluorescence

Resonance Raman scattering in semiconductor quantum dots: Adiabatic vs. time-dependent perturbation theory

Resonant Scattering of Surface Plasmon Polaritons by Dressed Quantum Dots

Raman spectroscopy of electrochemically self-assembled CdS quantum dots

Elastic Light Scattering by Semiconductor Quantum Dots