Abstract:The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Recent advances in atomically precise fabrication in silicon using scanning tunneling microscopy (STM) have made possible atom-by-atom fabrication of single and few-dopant quantum dots and atomic-scale control of tunneling in dopant-based devices. However, the complex fabrication requirements of multi-component devices have meant that emulating two-dimensional (2D) Fermi-Hubbard physics using these systems has not been demonstrated. Here, we overcome these challenges by integrating the latest developments in atomic fabrication and demonstrate the analog quantum simulation of a 2D extended Fermi-Hubbard Hamiltonian using STM-fabricated 3x3 arrays of single/few-dopant quantum dots. We demonstrate low-temperature quantum transport and tuning of the electron ensemble using in-plane gates as efficient probes to characterize the many-body properties, such as charge addition, tunnel coupling, and the impact of disorder within the array. By controlling the array lattice constants with sub-nm precision, we demonstrate tuning of the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from Mott insulating to metallic behavior in the array. By increasing the measurement temperature, we simulate the effect of thermally activated hopping and Hubbard band formation in transport spectroscopy. We compare the analog quantum simulations with numerically simulated results to help understand the energy spectrum and resonant tunneling within the array. The results demonstrated in this study serve as a launching point for a new class of engineered artificial lattices to simulate the extended Fermi-Hubbard model of strongly correlated materials.

Coulomb correlation effects in semiconductor quantum dots: The role of dimensionality

Role of Coulomb correlations in the optical spectra of semiconductor quantum dots

Addition energies in semiconductor quantum dots: Role of electron-electron interaction

Correlation Effects in Quantum Dot Wave Function Imaging

Correlated Electron Transport Through Parallel Double-Quantum-dot

Correlation Effects On Electron Tunneling Through Doubly Occupied Quantum Dots: A Study Beyond Phenomenological Models

Signatures of the Correlated-Hopping Interaction in Non-Linear Transport through a Quantum Dot

Imaging quasi-particle wavefunctions in quantum dots via tunneling spectroscopy

Electron-hole localization in coupled quantum dots

Electronic Correlations in Multielectron Silicon Quantum Dots

Electron Transport Through a 1D Chain of Dopant-Based Quantum Dots

Electron correlations, spontaneous magnetization and momentum density in quantum dots

The interplay between shell effects and electron correlations in quantum dots

Semiquantitative theory of electronic Raman scattering from medium-size quantum dots

Imaging correlated wave functions of few-electron quantum dots: Theory and scanning tunneling spectroscopy experiments

Quantum theory of the charge stability diagram of semiconductor double quantum dot systems

Observation of Spatial Charge and Spin Correlations in the 2D Fermi-Hubbard Model

Coulomb Correlations and the Wigner-Mott Transition

Size and Shape Effects of Quantum Dots on Two-Electron Spectra

Electron-phonon interaction and electronic correlations in transport through electrostatically and tunnel coupled quantum dots

Quantum Simulation of an Extended Fermi-Hubbard Model Using a 2D Lattice of Dopant-based Quantum Dots