Correlation Effects On Electron Tunneling Through Doubly Occupied Quantum Dots: A Study Beyond Phenomenological Models

Jian Lan,Weidong Sheng
DOI: https://doi.org/10.1063/1.3651388
IF: 2.877
2011-01-01
Journal of Applied Physics
Abstract:Electron transport through doubly occupied quantum dots is studied theoretically. Beyond the semi-classic framework of phenomenological models, a quantum mechanical solution for the cotunneling and sequential tunneling of electrons through a one-dimensional multi-level quantum dot is obtained. Correlation effects are shown to play an important role in inelastic sequential tunneling through the doubly occupied system, which accommodates four single-particle levels. It is revealed that the cotunneling conductance exhibits strong dependence on the spin configuration of the electrons confined inside the dot. Especially for the triplet configuration, the conductance shows an obvious deviation from the well-known quadratic dependence on the applied bias voltage. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3651388]
What problem does this paper attempt to address?