Structural and electrical properties of LaNiO3 thin film electrodes for integrated ferroelectric devices
Kaibin Ruan,Guangheng Wu,Tong Liang,Dinghua Bao
DOI: https://doi.org/10.3321/j.issn:1671-4512.2007.z1.012
2007-01-01
Abstract:LaNiO3(LNO) thin films were prepared on(100)Si,SiO2/Si,(100)Al2O3,(100)MgO,(100)SrTiO3(STO),(100)ZrO2 substrates by chemical solution deposition.Structural and electrical properties of these LNO thin films annealed at different temperatures were studied.The results indicated that substrates had an influence on crystallization of LNO thin films;a highly(100)-oriented LNO thin film was attained on STO substrate with a low resistivity of 0.87 mΩ·cm.For the LNO thin films on silicon substrates,with the annealing temperatures increased from 550 ℃ to 750 ℃,the grain size increased,and the resistivity decreased.However,while the annealing temperature exceeded 750 ℃,the resistivity increased due to the decomposition of LNO thin films.All the LNO films were smooth,dense,uniform and crack-free,which were confirmed by Field Emission Scanning Electron Microscope.Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.