Preparation and Properties of Highly Oriented Lanio3 Thin Films on Different Substrates

Xian Yang,Xiaoqing Wu,Wei Ren,Peng Shi,Xin Yan,Hongsheng Lei,Xi Yao
DOI: https://doi.org/10.1080/00150190701527878
2007-01-01
Ferroelectrics
Abstract:Highly (100) and (110) oriented LaNiO3 (LNO) thin films were prepared on various substrates, including Si (100), Si (111), SiO2/Si, Si3N4/Si by a metal-organic decomposition (MOD) method. Two different thermal processes were employed to crystallize LNO films. XRD analysis showed different thermal processes led to different preferential orientations of LNO films. The orientation dependence of LNO films on annealing process has been investigated. FESEM and AFM images show LNO films are uniform and crack-free. Low resistivity and high infrared absorbability make LNO thin film a promising electrode and infrared absorbed material for IR detector applications.
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