Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

CMOS as a research platform

A New Initiative in Microelectronics Processing at Georgia Tech

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

CMOS Platform for Atomic-Scale Device Fabrication

Simulation of Georgia Tech'S Cmos Baseline Using T-Suprem4 and Medici

Si- and Ge-Based Electronic Devices

Ge CMOS Technology with Advanced Interface and Junction Engineering.

High Mobility CMOS Technologies Using III-V/Ge Channels on Si Platform

Device and Integration Technologies of III-V/Ge Channel CMOS

New Materials for Post-Si Computing: Ge and GeSn Devices

III–V/Ge channel MOS device technologies in nano CMOS era

A CMOS Compatible Process for Monolithic Integration of High-Aspect-ratio Bulk Silicon Microstructures

Technology Platform for IC Design in Nano-scale CMOS

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Post-CMOS Process for High-Aspect-ratio Monolithically Integrated Single Crystal Silicon Microstructures

CMOS MEMS: A Key Technology Towards the &#x201c;more Than Moore&#x201D; Era

Study on Compatible CMOS-MEMS Process with Surface Micromachining for the Application of Monolithic Integration

Inter-CMOS process for monolithic integrated MEMS resonator

(Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

State of the Art and Future Perspectives in Advanced CMOS Technology