Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Synthesis of gallium nitride nanowires by ammoniating Ga2O3/Pd/sapphire films

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Synthesis of Mg-doped GaN Nanowires by Au Catalysis on Si Substrates

Two-step synthesis of one-dimensional single crystalline GaN nanowires

The Synthesis of High Quality GaN Nanowires by Amomoniating Ga_2O_3 and Metal Ga Mixture

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Large-scale Crystalline GaN Nanowires Synthesized Through a Chemical Vapor Deposition Method

Synthesis of GaN nanoparticles from NH4[Ga(OH)2CO3] under a flow of ammonia gas

Catalytic synthesis of single-crystalline gallium nitride nanobelts

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

High-Quality Gan Nanowires Synthesized Using A Cvd Approach

Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer

Synthesis of High-Purity GaP Nanowires Using a Vapor Deposition Method

Regular arrays of GaN nanorods

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Synthesis and Microstructure of Gallium Phosphide Nanowires

Large-scale Synthesis of GaN Nanorods and Their Photoluminescence

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate