Abstract:Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

Synthesis of GaN nanoparticles from NH4[Ga(OH)2CO3] under a flow of ammonia gas

Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature

Synthesis of gallium nitride nanowires by ammoniating Ga2O3/Pd/sapphire films

Preparation of Gallium Nitride from Gallium–magnesium Alloy Powders

Fabrication of Gan Nanodots Via Gan Thermal Decomposition in H-2 Atmosphere

Rapid synthesis of gallium nitride powder

Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

ChemInform Abstract: GaN Crystals Prepared Through Solid‐State Metathesis Reaction from NaGaO2 and BN under High Pressure and High Temperature.

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

Investigation of the Reaction Time and the Process of Synthesis of Gan Nanopowders by Ammoniating Ga2o3

Rapid Synthesis of High Purity Gan Powder

Large-scale Synthesis of GaN Nanorods and Their Photoluminescence

Synthesis of Nanocrystalline Aluminum Nitride by Nitridation of Δ‐al2o3 Nanoparticles in Flowing Ammonia

The Synthesis of High Quality GaN Nanowires by Amomoniating Ga_2O_3 and Metal Ga Mixture

Synthesis of GaN–carbon Composite Nanotubes and GaN Nanorods by Arc Discharge in Nitrogen Atmosphere

Pyrolysis Approach to the Synthesis of Gallium Nitride Nanorods

Synthesis of Aluminum Nitride by Nitridation of γ-Al<sub>2</sub>O<sub>3</sub> Nanoparticles in Flowing Ammonia

Synthesis of Aluminum Nitride by Nitridation of Γ-Al2o3 Nanoparticles in Flowing Ammonia

Microwave Hydrothermal Synthesis of Gan Nanorods

Low-temperature Synthesis and Characterization of GaN Nanocrystals from Gallium Trichloride Precursor

Two-step synthesis of one-dimensional single crystalline GaN nanowires