Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Room Temperature Optical Bistability in Hydrogenated Amorphous Silicon-Carbon Alloys

Study of Optical Nonlinearity in Hydrogenated Amorphous Silicon Carbide Films

The Study Of Optical Nonlinearity In Amorphous Si-Based Alloys

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Structural properties of hydrogenated amorphous silicon carbide alloys

Optical Bistability in Semiconductor Periodic Structures

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Optical Bistability in Nanosilicon with Record Low Q -Factor

Properites of Hydrogenated Amorphous Silicon Carbide Films Irradiated by Excimer Pulse Laser

Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

Temperature-dependent Resistive Switching of Amorphous Carbon/silicon Heterojunctions

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Nonlinear Optical Response of Amorphous Si:H

Visible Electroluminescence from Amorphous Hydrogenated Silicon Carbide Prepared by Using Organic Carbon Source

Terahertz Nonlinear Optics in Two-dimensional Semi-Hydrogenated SiB

Optical Properties and Local Bonding Configurations of Hydrogenated Amorphous Silicon Nitride Thin Films

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Room Temperature Ferromagnetism in Cr-doped Hydrogenated Amorphous Si Films

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films