Principle and Applications of Plasma Enhanced Atomic Layer Deposition

Cao Yanqiang,Li Aidong
DOI: https://doi.org/10.3969/j.issn.1671-4776.2012.07.011
2012-01-01
Abstract:Plasma enhanced atomic layer deposition(PEALD) is an efficient method for the pre-paration of high-quality ultra-thin films at low temperature,and has drawn great attention from industry and research fields in recent years.The development history and principle of the PEALD are introduced briefly.Three equipment configurations are described,including the radical-enhanced ALD,direct plasma ALD and remote plasma ALD,and their advantages and disadvantages are compared.The characteristics of PEALD are mainly reviewed,such as low deposition temperature,more choices of precursors and materials,flexible processing conditions and good film properties.However,it also faces some challenges from reduced film conformality and plasma damage.Several important applications of PEALD are reviewed,including the metal film deposition,Cu interconnection barrier layer,high dielectric constant materials,and encapsulation.Finally,the development prospects of PEALD are presented.
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