Integration of GaAs/In0.1Ga0.9As/AlAs Resonance Tunneling Heterostructures into Micro‐electro‐mechanical Systems for Sensor Applications

Chenyang Xue,Jie Hu,Wendong Zhang,Binzhen Zhang,Jijun Xiong,Yong Chen
DOI: https://doi.org/10.1002/pssa.200925015
2010-01-01
Abstract:Double-barrier quantum-well resonant tunneling heterostructures of GaAs/In0.1Ga0.9As/AlAs have been used as pressure-sensing elements of designed micro-electro-mechanical systems. The static experiments have been conducted on the heterostructure, in both positive and negative differential resistance (PDR and NDR) regions, showing a piezoresistive coefficient of 3.85 x 10(-9)Pa(-1), which is about seven times larger than that of piezoresistive silicon devices. At the same time, the devices also provided an improved dynamic response (119.6 mu V.g(-1)V(-1))and signal-to-noise ratio (57 dB) in the NDR region. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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