Microstructure and Electrical Properties of Y2O3-doped ZnO-based Varistor Ceramics

LIU Hong-yu,KONG Hui,MA Xue-ming
DOI: https://doi.org/10.3969/j.issn.1004-2474.2007.06.019
2007-01-01
Abstract:Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling(HEBM) technique under low-temperature sintering,with voltage-gradient(ES) of 1 934~2 197 V/mm,non-linear coefficient(α) of 20.8~21.8,leakage current(IL) of 0.59~1.04 μA and density(ρ)of 5.46~5.57 g/cm3.The distribution and morphology of varistor ceramics were observed by EPMA.XRD verified the existence of Y2O3 phase in sample Y4(x(Y2O3)=0.10%).With increasing Y2O3 content,ES and α increased,IL,ρ and grain size(D) decreased;the donor concentration(Nd) and density of interface states(Ns) decreased,whereas barrier height(φB) and barrier width(ω) increased.
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