Abstract:Although there are various methods to measure the modulation transfer function (MTF) of charge-coupled devices (CCD). the interferometric fringe pattern method has advantages over others, such as canted slit sources, bar targets, knife-edge, laser-speckle patterns, random noise pattern, etc. Our interferometric method is relatively simple and versatile: It requires no critical optics and no focusing or precision alignment, the entry array is tested, the contrast ratio of the test pattern is high enough, the spatial frequency of the fringe pattern can vary continuously. Our method generates the formation of a sinusoidal intensity fringe pattern by the interference of two monochromatic plane waves, and straightforward projects it onto the CCD array under test. The construction of the experimental device is based on the Fresnel Double-Mirror structure. A 2.5 mw He-Ne laser with the wavelength of 632.8 nm is used as the light source, the laser beam is spatially filtered by a 10 mu m pinhole and expanded to a diameter of 30 mm, and the resulting wave front is divided by two mirrors, which incline to each other at a small angle, and interfered. One of the mirrors is rotatable to vary the frequency of the pattern. The CCD array is mounted on a stage, which is also rotatable to make that the CCD array takes different angle with the fringe pattern direction, to receive the patterns. With the method we provided, the spatial frequency can be extended to some 2 times the Nyquist frequency of the CCD array to study the aliasing effect. In the Cartesian coordinates, the x- and y- axis MTFs (at angle 0 degrees and 90 degrees) of the CCD array were measured, the other three MTFs (at angle 26.56 degrees, 45 degrees and 63.44 degrees), which nobody has done before, were also tested offering a more comprehensive characterization of the CCD array.

Multiplication Model of EMCCD Based on Single Type of Carrier

Distributed equivalent circuit model for the charge carrier multiplier of electron multiplying CCDs

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Noise Characteristics of Electron Multiplying Charge Coupled Devices

Influencing Factors of Image Uniformity Affected by Output Probability Distribution of Charge Carrier Multiplier

Research on Model of Charge Delivering in CCM Based on Z Transform

Research on Modulation Transfer Function of the Electron Multiplying CCD

Modulation transfer function measurement of charge-coupled devices using frequency-variable fringe patterns

An Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode

Signal-to-noise ratio performance comparison of Electron Multiplying CCD and Intensified CCD detectors

Based on EMCCD Imaging System

Performance parameters test of electron multiplying CCD

Statistical Computation for Multipactors in Arbitrary Microwave Devices

Accounting for Clock-Induced Charge Production in the EMCCD Gain Register

Electron multiplying CCD technology: The new ICCD

A universal gain theory of the multiplying layer in EBCMOS based on elastic and inelastic scattering

Statistics of electron-multiplying charge-coupled devices

Multi Pinned Phase Mode in Electron Multiplying Charge Coupled Devices

Frequency characteristic study of charge carrier multiplier based on transmission line model

Multicarrier Multipactor Analysis Based on Branching Levy Walk Hypothesis

Simple Matrix-Method Modeling for Avalanche Photodetectors with Arbitrary Layer Structures and Absorption/Multiplication Coefficients