Distributed equivalent circuit model for the charge carrier multiplier of electron multiplying CCDs

Beibei Zhou,Qian Chen,He Weiji
DOI: https://doi.org/10.3969/j.issn.1007-2276.2011.02.011
2011-01-01
Abstract:In order to study the characteristics of the charge multiplication and charge transfer in the charge carrier multiplier (CCM) of the electron multiplying charge-coupled device (EMCCD), a distributed equivalent circuit model was proposed for the charge delivery in CCM. The potential distribution in the CCM element of uniform doping was carried out by solving the Possion equation. The maximum potential expression in the CCM element was obtained by the Kirchhoff's voltage law (KVL), and the distributed equivalent circuit of the CCM element was shown. Combined with the potential distribution in the CCM element, the distributed equivalent circuit model of the CCM was also gained. The analysis of this model shows that if the interelectrode gap length in the CCM elements decreases, the rate of the charge multiplication increases. The charge delivery mainly depends on the self-induced field and the thermal diffusion field. Most of the stored charges transfer to the next CCM element in the beginning of the clockcycle due to the electron mobility generated by the self-induced field.
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