Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors
Tomoya Taguchi,Fabio Chiarella,Mario Barra,Federico Chianese,Yoshihiro Kubozono,Antonio Cassinese
DOI: https://doi.org/10.1021/acsami.0c20140
2021-02-15
Abstract:Electronic devices relying on the combination of different conjugated organic materials are considerably appealing for their potential use in many applications such as photovoltaics, light emission, and digital/analog circuitry. In this study, the electrical response of field-effect transistors achieved through the evaporation of picene and PDIF-CN2 molecules, two well-known organic semiconductors with remarkable charge transport properties, was investigated. With the main goal to get a balanced ambipolar response, various device configurations bearing double-layer, triple-layer, and codeposited active channels were analyzed. The most suitable choices for the layer deposition processes, the related characteristic parameters, and the electrode position were identified to this purpose. In this way, ambipolar organic field-effect transistors exhibiting balanced mobility values exceeding 0.1 cm2 V–1 s–1 for both electrons and holes were obtained. These experimental results highlight also how the combination between picene and PDIF-CN2 layers allows tuning the threshold voltages of the p-type response. Scanning Kelvin probe microscopy (SKPM) images acquired on picene/PDIF-CN2 heterojunctions suggest the presence of an interface dipole between the two organic layers. This feature is related to the partial accumulation of space charge at the interface being enhanced when the electrons are depleted in the underlayer.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c20140.X-ray diffractogram of picene/PDIF-CN2 heterostructures, single layers and blend film; fitting curves of the height–height correlation data extracted from the AFM images in Figure 2; electrical characterization of picene (60 nm thick) and PDIF-CN2 (15 nm thick) single layers based OFETs; electrical characterization of middle-contact bottom-gate devices; AFM images and electrical characterization of inverted PDIF-CN2/picene heterostructure; AFM image and electrical characterization of picene/PDIF-CN2 blend; AFM image and potential maps of picene/PDIF-CN2 heterostructure a different coverage (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology