Synthesis and Interfacial Charge Separation of the Hetero-Structured Self-Assembly of an Α-Terthiophene Derivative Covalently Bonded on P-Silicon

CS Cao,C Wang,Y Cao,TF Xie,WB Song,YH Zhang,XD Chai,TJ Li
DOI: https://doi.org/10.1016/s1010-6030(99)00114-8
1999-01-01
Abstract:An inorganic/organic hetero-structured self-assembly (α-3TCp/p-Si) has been fabricated by covalently coupling (2, 2′:5′, 2″-terthiophene)-5-carboxylic acid (α-3T) on a p-type silicon wafer (111, p-Si) by means of a silane-based coupling agent (Cp). Its formation was proved by the changes in static contact angles and X-ray photoelectron spectra (XPS). Interfacial electron transfer of α-3TCp/p-Si was studied by surface photovoltage (SPV) spectroscopy. The results indicate that α-3TCp/p-Si possesses rather high SPV response intensity in comparison with that of an analogue self-assembly of α-3T/p-Si prepared through the LB technique, i.e. a direct adsorption method. This implies that high charge transfer effect can be generated at the interfaces of the organic layer α-3TCp and p-type silicon. The reason for that was explained through an energy band model.
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