Theory of the Spin Relaxation of Conduction Electrons in Silicon.

J. L. Cheng,M. W. Wu,J. Fabian
DOI: https://doi.org/10.1103/physrevlett.104.016601
IF: 8.6
2010-01-01
Physical Review Letters
Abstract:A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T1 agree with the spin resonance and spin injection data, following a T(-3) temperature dependence. The valley anisotropy of T1 and the spin relaxation rates for hot electrons are predicted.
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