Large Photomultiplication by Charge-Self-Trapping for High-Response Quantum Dot Infrared Photodetectors
Kaimin Xu,Liang Ke,Hongbin Dou,Rui Xu,Wenjia Zhou,Qi Wei,Xinzuo Sun,Hao Wang,Haobo Wu,Lin Li,Jiamin Xue,Baile Chen,Tsu-Chien Weng,Li Zheng,Yuehui Yu,Zhijun Ning
DOI: https://doi.org/10.1021/acsami.2c01046
2022-03-15
Abstract:PbS colloidal quantum dots (CQDs) are emerging as promising candidates for next-generation, low-cost, and high-performance infrared photodetectors. Recently, photomultiplication has been explored to improve the detectivity of CQD infrared photodetectors by doping charge-trapping material into a matrix. However, this relies on remote doping that could influence carrier transfer giving rise to limited photomultiplication. Herein, a charge-self-trapped ZnO layer is prepared by a surface reaction between acid and ZnO. Photogenerated electrons trapped by oxygen vacancy defects at the ZnO surface generate a strong interfacial electrical field and induce large photomultiplication at extremely low bias. A PbS CQD infrared photodiode based on this structure shows a response (R) of 77.0 A·W–1 and specific detectivity of 1.5 × 1011 Jones at 1550 nm under a −0.3 V bias. This self-trapped ZnO layer can be applied to other photodetectors such as perovskite-based devices.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.2c01046.Chemical information; characterization information; FTIR spectra; device structure and the response of the MHP photodiode; morphology images at the AFM mode of ZnO layers; XPS spectra of ZnO layers; XAS spectra of ZnO layers; SEM cross-sectional images; and noise power plot of the photodetector (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology