Growth And Characterization Of Baxsr1-Xtio3 Thin Films Derived By A Low-Temperature Process

Jinbao Xu,Jiwei Zhai,Xi Yao
DOI: https://doi.org/10.1021/cg060178i
IF: 4.01
2006-01-01
Crystal Growth & Design
Abstract:The BaxSr1-xTiO3(BST) ferroelectric thin films on Pt(111)/Ti/SiO2/Si(100) substrates were fabricated by a sol-gel/hydrothermal process at a very low-temperature processing of 100-200 degrees C. X-ray diffraction analysis showed that the BST thin films on Pt(111)/Ti/SiO2/Si(100) substrates were polycrystalline with a (110) preferential orientation. A dielectric constant at 1 MHz and a dissipation factor dependence of frequency in the range of 100-10 MHz for the Au/BST/Pt capacitors were obtained.
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