Frequency-Independent Asymmetric Double-Pi Equivalent Circuit For On-Chip Spiral Inductors: Physics-Based Modeling And Parameter Extraction

fengyi huang,jingxue lu,nan jiang,xiaowen zhang,wengang wu,yangyuan wang
DOI: https://doi.org/10.1109/JSSC.2006.881574
IF: 5.4
2006-01-01
IEEE Journal of Solid-State Circuits
Abstract:We present a frequency-independent compact model for silicon on-chip spiral inductors with an asymmetric double-pi equivalent circuit incorporating high-order parasitics such as skin effect and proximity effect. A set of partition factors for parameter ratios between the input and output segments has been introduced and derived from physical analysis to characterize the non-symmetrical feature of the inductor. A novel approach to extracting the model parameters is also developed based on measured S-parameters. As demonstrated for a series of inductors with different geometries fabricated by 0.18-mu m CMOS process, the partition factors derived from the physical model are consistent with the extracted parameters, and the model can simulate precisely the inductor characteristics including the asymmetric admittances over a wide frequency rang beyond the self-resonant frequency without fitting parameters.
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