Optical Properties of Zn_xCd_(1-x)Se/MgSe Quantum Wells Grown on InP Substrate by Molecular Beam Epitaxy

LI Bing-sheng
DOI: https://doi.org/10.3788/fgxb20133407.0811
2013-01-01
Chinese Journal of Luminescence
Abstract:We studied the band gap structure of ZnxCd1-xSe/MgSe heterostructure grown on(001) InP substrates by molecular beam epitaxy.In the single quantum well growth of ZnxCd1-xSe/MgSe,the in situ reflection high energy electron diffraction intensity oscillations and streak patterns demonstrate that zincblende(ZB) MgSe has been formed.Furthermore,with the introduction of thick ZnxCd1-xSe spacer layers,the ZB MgSe/ZnxCd1-xSe multi-quantum wells can be obtained.Based on the results of photoluminescence and calculation,the offset for conduction and valence band in MgSe/ZnxCd1-xSe heterostructure is estimated to be 1.2 eV and 0.27 eV,respectively.Using the estimated value of band offset,the calculated ISB transition energies agree well with results of infrared absorption experiments.With such a large band offset,ISB transitions in this material system could be extended to 1.55 μm within an asymmetric double quantum wells with coupling effects.
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