Study of Monolithic Integrated GaAs-Based Long Wavelength Resonant Cavity Enhanced Photodetector

Sun Lanjiang,Huang Hui,Cai Shiwei,Luo Weiwei,Wang Qi,Huang Yongqing,Ren Xiaomin
DOI: https://doi.org/10.3969/j.issn.1003-353x.2009.05.012
2009-01-01
Abstract:A long wavelength resonant-cavity-enhanced photodetector was demonstrated,by heteroepitaxy,the InP-InGaAs-InP p-i-n structure on GaAs substrate,and GaAs/AlAs distributed Bragg reflectors(DBR)were grown.High quality heteroepitaxy was realized by two-step growth.External quantum efficiency of 67.3% at 1 549.4 nm with spectrum response linewidth of 17 nm,and 53.5% at 1 497.7 nm are obtained in the device with an InGaAs absorption layer thickness of 200 nm.Because of its monolithically integrated structure,the simple process of the photodetector has large potential of industrialization.With the development of low temperature buffer technology,the performance of this kind of RCE photodetector will surely be improved in the future.
What problem does this paper attempt to address?