EPR parameter g factors and defect structures for Ni+ ions in CuGaSe2 semiconductor

Shun-Ru Zhang,Shi-Fu Zhu,Bei-Jun Zhao
DOI: https://doi.org/10.1016/j.ssc.2010.08.027
IF: 1.934
2010-01-01
Solid State Communications
Abstract:By using high-order perturbation formulas based on the two-spin–orbit (two-SO) coupling parameter mechanism and the superposition model, the g factors g and g⊥ are calculated for Ni+ ions (3d9) in a tetragonal tetrahedral crystal. By comparing the theoretical predictions with the gi values measured by electron paramagnetic resonance (EPR), the defect structures described by the anion position parameter μ, the angle θ and the tilting angle τ are estimated for the Ni+ centers in CuGaSe2. The results indicate that the g factors of Ni+ centers can be reasonably explained on the basis of the defect model.
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