Abstract:In materials science, point defects play a crucial role in materials properties. This is particularly well known for the wide band gap insulators where the defect formation/compensation determines the equilibrium Fermi level and generally the doping response of a given material. Similarly, the main defect trends are also widely understood for regular metals (e.g., Cu and Zn discussed herein). With the development of electronic structure theory, a unique class of quantum materials - gapped metals (e.g., Ca6Al7O16, SrNbO3, In15SnO24, and CaN2) that exhibit characteristics of both metals and insulators - has been identified. While these materials have internal band gaps similar to insulators, their Fermi level is within one of the main band edges, giving a large intrinsic free carrier concentration. Such unique electronic structures give rise to unique defect physics, where the formation of acceptor or donor defect directly affects not only the electronic structure but also can substantially shift the Fermi level. Motivated by this, herein, we develop a fundamental first-principles theory of defect formation in gapped metal with a primary focus on accurate calculations of defect formation energy. We demonstrate that due to electron-hole recombination, the formation of acceptor defects in n-type gapped metals results in significant dependence of defect formation energy on supercell size, which we explain by the change of band filling and its effect on the defect formation energetics. To accurately describe defect formation energy, we revisit the phenomenology of band-filling corrections and demonstrate the effect of this correction, accurate potential alignment, and other factors that can affect defect energetics. Thus, this work not only sheds light on the intrinsic properties of gapped metals but, in general, establishes a theoretical foundation for analyzing defects in gapped metals.

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First Principles Calculation on Polytypes of Ordered Defect Compound Cuin5se8

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Structural, electronic and optical calculations of Cu(In,Ga)Se2 ternary chalcopyrites

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Electronic Structure of Bulk and Defected CaCu3Ti4O12

First-principles study the effect of anion position on physical properties of CuGaSe2

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Theoretical Study of Defects in Cu$_3$SbSe$_4$: Search for Optimum Dopants for Enhancing Thermoelectric Properties

First-principles study on electronic and optical properties of Zn-substituted CuGaSe2

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Intrinsic defect study on ternary ABX2 diamond-like thermoelectric materials and analysis of the density of energy function

Intrinsic defects and the influences on electrical transport properties in quaternary diamond-like compounds: Cd2Cu3In3Te8 as an example

First-principles Study of Native Defects in Bulk Sm2CuO4 and Its (001) Surface Structure

Synthesis, structure, linear and nonlinear optical properties of noncentrosymmetric quaternary diamond-like semiconductors, Cu2ZnGeSe4 (CZGSe) and the novel Cu4ZnGe2Se7