Abstract:Point defects and impurities strongly affect the physical properties of materials and have a decisive impact on their performance in applications. First-principles calculations have emerged as a powerful approach that complements experiments and can serve as a predictive tool in the identification and characterization of defects. The theoretical modeling of point defects in crystalline materials by means of electronic-structure calculations, with an emphasis on approaches based on density functional theory (DFT), is reviewed. A general thermodynamic formalism is laid down to investigate the physical properties of point defects independent of the materials class (semiconductors, insulators, and metals), indicating how the relevant thermodynamic quantities, such as formation energy, entropy, and excess volume, can be obtained from electronic structure calculations. Practical aspects such as the supercell approach and efficient strategies to extrapolate to the isolated-defect or dilute limit are discussed. Recent advances in tractable approximations to the exchange-correlation functional (DFT+U, hybrid functionals) and approaches beyond DFT are highlighted. These advances have largely removed the long-standing uncertainty of defect formation energies in semiconductors and insulators due to the failure of standard DFT to reproduce band gaps. Two case studies illustrate how such calculations provide new insight into the physics and role of point defects in real materials.

Point defects in CdTe and CdTeSe alloy: A first principles investigation with

Point defects in CdTe and CdTeSe alloy: a first principles investigation with DFT+U

Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

Contributions of point defects, chemical disorder, and thermal vibrations to electronic properties of Cd(1-x)Zn(x)Te alloys

Defect levels in d-electron containing systems: Comparative study of CdTe using LDA and LDA

Point Defects in Cd0.95Zn0.05Te

First-principles calculation of intrinsic defect chemistry and self-doping in PbTe

Ab Initio Study of Intrinsic Point Defects in PbTe: an Insight into Phase Stability

CdTe/CdS、CdTe/ZnS核壳结构半导体量子点制备及荧光特性

Structural and electronic properties of CdTe:Cl from first-principles

Carrier providers or carrier killers: the case of Cu defects in CdTe solar cells

Distinctive Distribution of Defects in CdZnTe:In Ingots and Their Effects on the Photoelectric Properties

Understanding The Role Of Se In Defect Reduction In Cdte Photovoltaics

Defect Engineering in CdSxSe1–x Nanobelts: an Insight into Carrier Relaxation Dynamics Via Optical Pump–Terahertz Probe Spectroscopy

Investigation of Point Defects and Electrical Properties of the In-doped CdMnTe Grown by Traveling Heater Method

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

Atomic-scale Chemical Mapping of Copper Dopants in Bi2Te2.7Se0.3 Thermoelectric Alloy

First-principles calculations for point defects in solids

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu2SnSe3.

Dislocation-mediated Coupling Mechanism Between the Microstructural Defects and Te Inclusions in CdZnTe Single Crystals

Equilibrium densities of intrinsic defects in transition metal diselenides of molybdenum and tungsten