Abstract:We have performed systematic first-principles calculations for the structural and electronic properties of chalcopyrite semiconductors AgGaS2, AgGaSe2, CuGaS2, CuGaSe2, and their alloys. We show that, in contrast to conventional semiconductors, the band structures of these compounds exhibit several anomalous behaviors: (i) The band gaps of AgGaX2 are larger than the corresponding CuGaX2 (X=S and Se) compounds, despite the lattice constants of AgGaX2 being much larger than for CuGaX2. (ii) The valence band offsets between common-anion pairs CuGaX2/AgGaX2 are large and negative (i.e., CuGaX2 has higher valence band maximum than AgGaX2), opposite to their II-VI analogs. (iii) The valence band offsets between (MGaS2)-Ga-I/(MGaSe2)-Ga-I (M-I=Cu, Ag) are significantly smaller than their II-VI analogs. (iv) The band gap bowing parameters for the common-anion alloys are larger than the common-cation alloys, following the same trend as the valence band offsets. Moreover, we find that the wave function localization of the conduction band minimum states at the group III site plays an important role on the band gap reduction of the chalcopyrites relative to their binary analogs. The origin of the band structure anomalies observed in this system is explained in terms of the atomic sizes and chemical potentials and the increased structural and chemical freedom of these ternary compounds.

Studies of the anion position parameter χ of the ternary semiconductor CuGaS2 by use of Ni+ ion probe

Theoretical Studies on Near-Edge X-Ray Absorption Fine Structure of (So+2o)/cu(100)

First-principles study the effect of anion position on physical properties of CuGaSe2

Studies of the optical band positions, spin-Hamiltonian parameters and defect structure for Cr3+ in CdIn2S4 crystal

A Study on the Electronic Structure, Superconductivity, and Optical Properties of Mgcni3

Unusual superexchange pathways in a Ni triangular lattice of NiGa$_2$S$_4$ with negative charge-transfer energy

Numerical Study of the Electronic Structure, Elastic and Optical Properties of Defect Quaternary Semiconductor CuGaSnSe4

INVESTIGATIONS ON THE LOCAL STRUCTURE AND THE EPR PARAMETERS FOR Cu2+-DOPED GaN

Structural, electronic and optical calculations of Cu(In,Ga)Se2 ternary chalcopyrites

First-principles study on the electronic structure and optical properties of MgCNi3

Optical Properties Oftlni2se2: Observation of Pseudogap Formation

Theoretical studies of the local structures and EPR parameters for Cu$^{2+}$ center in Cd$_{2}$(NH$_{4}$)$_{2}$(SO$_{4}$)$_{3}$ single crystal

A Density-Functional Study On The Atomic Geometry And Adsorption Of The Cu(100) C(2 X 2)/N Surface

EPR Parameters and Local Atom-position Parameters for Co2+ Ions in CdS and CdSe Semiconductors

Band-Structure Anomalies of the Chalcopyrite Semiconductors Cugax2 Versus Aggax2 (X=S and Se) and Their Alloys

First-principles study on electronic and optical properties of Zn-substituted CuGaSe2

Structural investigation of the insulator-metal transition in NiS$_{2-x}$Se$_x$ compounds

Defect structures for Fe3+, Mn2+, and Ni3+ impurities in wuritzite GaN crystals

An Ab Initio Study on the Properties of Sb-Rich GaBixSb1−x

Subsolidus phase relations of the Cu–Ga–N system

Electronic structure, linear, nonlinear optical susceptibilities and birefringence of CuInX2 (X = S, Se, Te) chalcopyrite-structure compounds