Abstract:GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.

Wafer Bonding Technique Used for the Integration of Cubic Gan/Gaas (001) with Si Substrate

Direct bonding of n-GaAs and p-GaN wafers

Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures

CMOS Integration of InGaAs Nmosfets and Ge Pmosfets with Self-Align Ni-based Metal S/D Using Direct Wafer Bonding

Direct Bonding of LiNbO3 and GaAs at Room Temperature by Using Activated Si Atom Layer

Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Electrical and Structural Analysis of β‐Ga2O3/GaN Wafer‐Bonded Heterojunctions with a ZnO Interlayer

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Realization of Wafer-Scale Single-Crystalline GaN Film on CMOS-compatible Si(100) Substrate by Ion-Cutting Technique

High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Wafer-scale bonded GaN–AlN with high interface thermal conductance

Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga 2 O 3 (001) substrates

Fabrication of extremely thermal-stable GaN template on Mo substrate using double bonding and step annealing process

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Silver Catalyzed Gallium Phosphide Nanowires Integrated on Silicon Andin Situag-Alloying Induced Bandgap Transition

Silver catalyzed gallium phosphide nanowires integrated on silicon and in situ Ag-alloying induced bandgap transition

Direct Integration of Iii-V Compound Semiconductor Nanostructures on Silicon by Selective Epitaxy

Investigation on the bonding quality of GaN and Si wafers bonded with Mo/Au nano-layer in atmospheric air