High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds

Wang Wanlu,Gao Jinying,Liao Kejun
DOI: https://doi.org/10.1088/0256-307x/9/8/015
1992-01-01
Chinese Physics Letters
Abstract:Diamond films have been synthesized by dc plasma chemical vapour deposition (CVD) from a gaseous mixture of acetone and hydrogen gases with a growth rate of 220 μm/h. The films obtained have good crystallinity that are characterized by Raman spectrometry, scanning electron microscopy and x-ray diffraction. X-ray photoelectron spectroscopy analysis have confirmed that diamond nucleation and growth are on SiC rather than on clean Si. The mechanism of high rate growth diamond films have been discussed too.
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