Controlled Growth of 3D Topological Insulator BiSb(Te1-ySey)3 Nanocrystals by Chemical Vapor Transport
Nour Abdelrahman,Titouan Charvin,Samuel Froeschke,Romain GIRAUD,Joseph Dufouleur,Alexey A Popov,Sandra Schiemenz,Daniel Wolf,B. Büchner,Michael Mertig,S. Hampel
DOI: https://doi.org/10.1039/d4tc02508c/v1/review1
IF: 6.4
2024-10-02
Journal of Materials Chemistry C
Abstract:The structural and electrical properties of thin nanocrystals of the 3D topological insulator BiSb(Te1-ySey)3 (y = 0.0, 0.01, 0.02,....0.09) have been investigated. The nanostructures were synthesized from a bulk parent BiSb(Te1-ySey)3 polycrystalline powder on different substrate materials using the bottom-up chemical vapor transport (CVT) method without the addition of transport agents, resulting in well-faceted and thin single crystals with dimensions of ~ 20 μm in length and ~ 20 nm in height. Thermodynamic calculations were performed to optimize the growth process. The chemical composition and morphology of the nanocrystals were analyzed by energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. The R3 ̄m crystal structure of individual nanocrystals and their high crystalline quality were studied by high-resolution transmission electron microscopy. Magnetotransport measurements confirm that bulk-charge compensation could be achieved by adding a small amount of Se to the ternary compound BiSbTe3, and the transport properties of thin flakes further reveal the enhanced carrier mobility of topological surface-state carriers.
materials science, multidisciplinary,physics, applied