Abstract:Promising research ﬁelds associated to solid state physics, such as thermoelectrics and spintronics, have been inﬂuenced by the unique properties of bismuth-based materials. Bismuth telluride (Bi2Te3), for example, is a semiconductor with a very small band gap and excellent thermoelectric properties which show one of the highest thermal to electrical energy conversion efﬁciency at room temperature. Moreover, bismuth telluride belongs to a new class of materials called Topological Insulators (TI), which exhibit surface conductivity with spin-momentum-locked electronic surface states while being bulk insulators. Both properties promise many application possibilities in electronic and spintronic devices with regards to energy efﬁciency and faster computing. The experimental investigation of the special topological insulator characteristics is very challenging, because the bulk conductivity dominates the electrical signal resulting in hardly accessible surface states. In order to overcome this challenge, the present dissertation initially presents the fabrication of Bi2Te3 nanowires with extremely large surface-to-volume ratio and independently controllable geometric, crystallographic and morphologic properties that enable a resolution of the surface states. The Bi2Te3 nanowires were synthesized by electrodeposition in ion-track etched polymer templates. For this purpose, 30-µm thick polycarbonate foils were irradiated by highly energetic heavy ions. Each ion creates an ion track, which can be converted into cylindrical nanopores by selective chemical etching. Subsequent electrochemical deposition within these nanopores resulted in nanowires with diameters between 25 and 100 nm. X-ray diffraction and transmission electron microscopy reveals highly textured nanowires consisting of single crystalline sections that are several hundreds of nanometers long. For both, bulk and surface, the chemical composition was analyzed by energy-dispersive x-ray spectroscopy and x-ray photoemission spectroscopy. The former shows a chemically homogeneous composition close to stoichiometry, while the latter revealed oxide and carbon contaminations, which is attributed to polymer residues from the template. Investigations of the electronic properties of individual Bi2Te3 nanowires were performed using nano-angle-resolved photoemission spectroscopy (nano-ARPES) at the French synchrotron SOLEIL. Sections of single nanowires were analyzed by employing a setup that was especially developed to obtain photoemission signals from individual nanoobjects. Angle-integrated measurements along the length of the nanowire recording the core levels, conﬁrmed the homogeneous chemical composition. Employing the angle-resolved mode, the valence band structure of single nanowires sections was successfully revealed. First principles calculations of the preferably deposited crystallographic orientation are in good agreement with the experimental nano-ARPES results. In order to conduct electrical transport measurements, individual nanowires were contacted by laser and electron beam lithography. The resistivity recorded as a function of temperature exhibits typical metallic behavior and increases with decreasing wire diameter. Magnetotransport investigations for different nanowire diameters were successfully performed by applying pulsed (up to 60 T) or static (up to 12 T) magnetic ﬁelds perpendicular and parallel to the wire axis. Generally, the magnetoresistance was found to be positive, increasing either linearly or quadratically with the magnetic ﬁeld and shows no saturation. At low temperatures and within the zero-magnetic-ﬁeld regime, the appearance of weak antilocalization effects indicates the presence of quantum interference caused by large spin-orbit coupling. The obtained results provide ﬁrst signs of quantum phenomena in electrochemically deposited Bi2Te3 nanowires. The presented successful investigation of electrodeposited Bi2Te3 nanowires by nano-ARPES and magnetotransport measurements opens new possibilities that are of great importance for future investigations of the electrical transport characteristics of topological insulators nanostructures. The developed experimental methods lay the groundwork to pursue these studies as a function of various nanowire properties such as diameter, crystallographic structure and grain boundaries. This knowledge combined with the easy and controlled fabrication of the unique nanowire samples employed here, promises many applications as innovative electronic and spintronic devices.

Thermal Transport along Bi2te3 Topological Insulator Nanowires

Anisotropic Lattice Thermal Conductivity In Topological Semimetal Zrgex (X = S, Se, Te): A First-Principles Study

Anisotropic thermoelectric properties of Weyl semimetal NbX (X = P and As): a potential thermoelectric material.

Enhanced Thermoelectric Performance in Three-Dimensional Superlattice of Topological Insulator Thin Films

Thermal transport in Bi2Te3-PbTe segmented thermoelectric nanofilms

Thermoelectric Characteristics of A Single-Crystalline Topological Insulator Bi2Se3 Nanowire

Thermoelectric performance of classical topological insulator nanowires

Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

Raman Characterization and Transport Properties of Morphology-Dependent Two-Dimensional Bi2Te3 Nanofilms

Thermoelectric prospects of nanomaterials with spin-orbit surface bands

Quantum transport and potential of topological states for thermoelectricity in Bi2Te3thin films

Few-quintuple Bi2Te3 Nanofilms As Potential Thermoelectric Materials

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Thermoelectric Properties of an Individual Suspended Single-Crystalline Sb2Se3 Nanowire

Semimetal to Semiconductor Transition and Thermoelectric Properties of Bismuth Nanotubes

Characterization of individual Bi2Te3 nanowires electrodeposited in etched ion-track membranes for nano-ARPES and electrical transport studies

Structural, Electronic, and Thermoelectric Properties of Bisb Nanotubes

Semimetal to semiconductor transition in $\text{Bi}/\text{TiO}_{2}$ core/shell nanowires

Quantum Transport and Potential of Topological States for Thermoelectricity in Bi$_2$Te$_3$ Thin Films

A T-type Method for Characterization of the Thermoelectric Performance of an Individual Free-Standing Single Crystal Bi2S3 Nanowire.

Enhanced thermoelectric properties of coaxial Bi2Te3/Sb2Te3 nanostructures studied by theoretical modeling