Preparation of Single-Phase Nd1.85 Ce0.15 CuO4 Thin Films by Pulse Laser Deposition and the Laser-Induced Thermoelectric Voltage Effect

熊飞,张辉,张鹏翔,蒋最敏

DOI: https://doi.org/10.3969/j.issn.1007-4252.2009.02.003

2009-01-01

Abstract:The single-phase Nd 1.85 Ce 0.15 CuO 4(NCCO)thin films were deposited epitaxially on SrTiO 3 substrate by pulse laser deposition(PLD).And for the first time,the laser-induced thermoelectric voltage(LITV)signals were detected in the NCCO thin films grown on the vicinal cut substrate.The Nd 1-x CexO 1.75(NCO)impurities were always observed in the NCCO films prepared under the condition of low deposition temperature as well as high oxygen pressure and laser pulse frequency.The difficult mobility of the Absorbed particles on the substrate surface contributed to the existence of NCO,and the annealing process at high temperature was also play an important role which was associated with the thermal decomposition due to the structural phase-transition.The impurities can be suppressed by increasing the deposition temperature but decreasing the laser pulse frequency and oxygen pressure,and vacuum annealing at temperature below 800℃.The epitaxial NCCO thin films with a single phase were demonstrated to be a new type of atomic thermopile material.LITV signals of 0.8V were detected when the tilted NCCO thin films were illuminated by pulse-laser of 248nm and the on-sample energy was just 1mJ.