Abstract:The realization of ohimic contact to n-GaN is usually achieved by using Ti/Al bilayer electrodes with high temperature annealing. Nevertheless, the process of high temperature annealing may destruct the (electronic) structure of devices, such as quantum well and superlattice structure. The ultimate objective of this research work is to obtain low resistance ohimic contact to n-GaN without high temperature annealing, thus (avoiding) the destruction of electronic structure effectively. In the research both nonalloyed condition and low temperature annealing are applied. Under nonalloyed condition, we firstly use alloyed TiAl_3 as contact electrode material directly on n-GaN with carrier concentration of 2×10~(18) cm~(-3). Compared with conventional Ti/Al bilayer structure, alloyed TiAl_3 structure facilitates the realization of nonalloyed n-type ohmic contact. However, with annealing at 500 ℃, the contact behavior of Ti/Al bilayer is improved rapidly and achieves ohmic, which is lower than the temperature assumed in some papers. After applying RIE process, both Ti/Al bilayer and TiAl_3 alloyed electrodes behave ohmic, which indicates that the surface of GaN is cleaning, thus intimate contact of Ti and GaN is vital to (achieve) ohmic contact to n-GaN. In the further experiment, Ti/TiAl_3 bilayer structure is introduced to compare with TiAl_3 alloyed structure. Both of the two structures behave ohmic with RIE process, yet TiAl_3 alloyed shows lower contact resistance, and excess Ti has no obvious effect to contact behavior under nonalloyed condition. After annealing with different temperature, Ti/TiAl_3 bilayer structure tends to form an ohmic contact with lower contact resistance. It proves that excess Ti is activated to form ohmic contact at high temperature annealing. Further analysis implies both of the nitrogen vacancies and TiAl_3 mechanisms play a critical role to form a low contact resistance ohmic contact to n-GaN, under the condition of nonalloyed or low annealing temperature. Accordingly, based on alloyed TiAl_3 structure, Ti/TiAl_3/Ni/Au structure is designed, which decreases the contact resistance significantly, and the specific contact resistance of 3×10~(-5) Ω·cm~2 is obtained with CTLM measurement.The introduction of TiAl_3 alloyed material can make a role as high temperature annealing in the aspect of forming TiAl_3 at the interface. With a certain thickness ratio, Ti/TiAl_3 can achieved low ohmic contact with low temperature annealing. Therefore, TiAl_3 alloyed will be promising in the application field of photoelectron and micro-electron devices that require strict temperature conditions.

I-V Properties of TiO_2-AlGaN/GaN Structure Obtained by Oxidation of Ti Fields

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Simulation and analysis of high breakdown voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 gate dielectric

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Electrical and optical properties of g-GaN/Al 0.5 Ga 0.5 N 2D/3D heterojunction under surface oxidation via first-principles

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

Electrical and Optical Properties of G-Gan/al0.5ga0.5n 2D/3D Heterojunction under Surface Oxidation Via First-Principles

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Novel Structural Ti/Al-Based Ohmic Contacts on Algan/Gan Heterostructures

Structure And Electrical Characteristics Of Algan/Gan Mishfet With Al2o3 Thin Film As Both Surface Passivation And Gate Dielectric

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Realization of Nonalloyed TiAl3 and Ti/TiAl3 Ohmic Contact to N-Gan

Al 2 O 3 -Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al 2 O 3 /TiO 2 Passivation Oxides

Performance Improvement and Current Collapse Suppression of Al 2 O 3 /AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

Enhanced Device Performance Of Algan/Gan High Electron Mobility Transistors With Thermal Oxidation Treatment

High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure