Abstract:Thin-film solar cells have become one of the most important branches in the areas of solar cells [1]. One attractive merit of thin-film solar cells is that the devices could be fabricated on plastic or metallic foils such as organic polymers and stainless steel, other than the traditional rigid glass plate substrate [2]. However, the new functionality brings a new issue that the device application may require intentional bending, stretching, or shaping after the fabrication, these externally applied strains may influence the mechanical stability. For solar cells, mechanical stability could usually be influenced by external factors such as mechanical force and temperature variations [3, 4]. Raman spectroscopy, profilometer measurements and X-ray diffraction (XRD) were common methods used to measure local mechanical stresses in semiconductor films and devices [5-6], however, these methods are either with complicated system or time-consuming when measuring large areas. This work provides a potentially simple method for diagnosing of externally induced strain in thin-film solar cells by EL measurements. Figure 1 shows the schematic diagram of the EL measurement setup and the introduction of external strain due to pumping force. The strained regions demonstrated not only increases of local EL intensity but also redshifts of the EL emission peak. The observed phenomena were well explained by a gradient quantum-well (GQW) model correlated with tensile strain in the thin films. External biaxial strain was considered in this model and the external strain was then obtained from the shift of the EL spectra. Finally, the spatially resolved strain was approximately obtained from the EL images by relating the EL emission intensity to the shift of the EL spectra as Figure 2 shows.

EBSD Analysis of Local Elastic Strain Fields in Semiconductor Structures

EBSD Measurements of Elastic Strain Fields in a GaN/sapphire Structure.

Measurement and Evaluation of Micro-Sized Strain Fields in GaN Epitaxial Structure

Strain Field in Gaas/Gan Wafer-Bonding Interface and Its Microstructure

Electron Backscatter Diffraction Analysis of Mirco-Sized Stress in the GaAs-AlGaAs Epitaxial Structure

The Use of Electron Backscatter Diffraction to Measure the Elastic Strain Fields in A Misfit Dislocation-Free Ingaasp/Inp Heterostructure

Scanning Electron Acoustic Microscopy and Electron Backscattering Diffraction Study of GaN/Al2O3 Hetero-Epitaxial Layer Film

Studies of Interfacial Thermal Stresses in a GaAs-GaN Bond with the Electron Backscatter Diffraction

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Nanoscale strain analysis of Si/Ge heterostructures

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Large Area Stress Distribution in Crystalline Materials Calculated from Lattice Deformation Identified by Electron Backscatter Diffraction

Application of EBSD to analyzing low strain level microstructure

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

In-situ Analysis of Electron Backscatter Diffraction for Strained Ni-W Alloy

High-Spatial-Resolution Strain Measurements by Auger Electron Spectroscopy in Epitaxial-Lateral-Overgrowth Gan

Deformation Potentials of Si-Doped Gaas from Microscopic Residual Stress Fields

Quantitative Nanoscale Local Strain Profiling in Embedded Sige Metal-Oxide-Semiconductor Structures

Area: Thin-film Compound Semiconductor PV DIAGNOSIS OF EXTERNALLY INDUCED SPATIALLY-RESOLVED STRAIN IN GAAS THIN-FILM SOLAR CELLS BY ELECTROLUMINESCENCE IMAGING METHOD

Micro-Raman for Local Strain Evaluation of GaN LEDs and Si Chips Assembled on Cu Substrates

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography